Abstract
The nature of the external quantum efficiency’s drop in the AlInGaN-based light-emitting diode’s heterostructures at high pumping has been considered. The temperature dependence of the external quantum efficiency has been investigated for two types of heterostructures with an active region located in the n- and p-type regions. It is found experimentally that the temperature dependence of the external quantum efficiency at high pumping for these two types of heterostructures is different. It is shown by numerical simulation that this difference is due to the unlikely behavior of the carrier injection’s efficiency into the active region of heterostructures with n- and p-type active regions. The results obtained indicate a key role of the injection mechanism in the drop of the external quantum efficiency at high pumping.
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Original Russian Text © A.S. Pavluchenko, I.V. Rozhansky, D.A. Zakheim, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 10, pp. 1391–1395.
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Pavluchenko, A.S., Rozhansky, I.V. & Zakheim, D.A. Manifestation of the injection mechanism of efficiency droop in the temperature dependence of the external quantum efficiency of AlInGaN-based light-emitting diodes. Semiconductors 43, 1351–1355 (2009). https://doi.org/10.1134/S1063782609100170
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DOI: https://doi.org/10.1134/S1063782609100170