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Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers

  • Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites
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Abstract

The behavior of negative-U-centers in high electric fields was considered. It was shown that multiphonon tunnel ionization of negative-U-centers in chalcogenide glassy semiconductors results in a significant increase in the number of conduction electrons, hence, to highly nonlinear current-voltage characteristics. This nonlinearity mechanism well explains the experimentally observed current-voltage characteristic of chalcogenide glassy semiconductors currently used as memory cells.

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, ul. Polytekhnicheskaya 29, St. Petersburg, 195251, Russia

    N. A. Bogoslowsky

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    K. D. Tsendin

Authors
  1. N. A. Bogoslowsky
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  2. K. D. Tsendin
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Correspondence to N. A. Bogoslowsky.

Additional information

Original Russian Text © N.A. Bogoslowsky, K.D. Tsendin, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 10, pp. 1378–1382.

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Bogoslowsky, N.A., Tsendin, K.D. Nonlinearity of current-voltage characteristics of chalcogenide glassy semiconductors, caused by multiphonon tunnel ionization of negative-U-centers. Semiconductors 43, 1338–1342 (2009). https://doi.org/10.1134/S1063782609100145

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  • DOI: https://doi.org/10.1134/S1063782609100145

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