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Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

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Abstract

Evidence given by electron microscopy of dislocation relaxation of stresses near InAs quantum dots buried into GaAs is presented. It was found that dislocation defects not emerging to the film surface are formed in some buried quantum dots. This suggests that stress relaxation occurs in the buried state of the quantum dot, rather than at the stage of the formation and growth of an InAs island on the GaAs surface. Models of internal dislocation relaxation of buried quantum dots are presented.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, St.Petersburg, 194021, Russia

    N. A. Bert, V. N. Nevedomsky, A. E. Romanov & V. V. Chaldyshev

  2. Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, Bolshoi pr. 61, St-Petersburg, 199178, Russia

    A. L. Kolesnikova

  3. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrent’eva 13, Novosibirsk, 630090, Russia

    V. V. Preobrazhenskii, M. A. Putyato, V. M. Seleznev & B. R. Semyagin

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  1. N. A. Bert
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  2. A. L. Kolesnikova
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  3. V. N. Nevedomsky
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  4. V. V. Preobrazhenskii
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  5. M. A. Putyato
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  6. A. E. Romanov
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  7. V. M. Seleznev
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  8. B. R. Semyagin
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  9. V. V. Chaldyshev
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Correspondence to V. V. Chaldyshev.

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Original Russian Text © N.A. Bert, A.L. Kolesnikova, V.N. Nevedomsky, V.V. Preobrazhenskii, M.A. Putyato, A.E. Romanov, V.M. Seleznev, B.R. Semyagin, V.V. Chaldyshev, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 10, pp. 1426–1433.

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Bert, N.A., Kolesnikova, A.L., Nevedomsky, V.N. et al. Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs. Semiconductors 43, 1387–1393 (2009). https://doi.org/10.1134/S1063782609100236

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  • DOI: https://doi.org/10.1134/S1063782609100236

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