1. Power bipolar devices based on silicon carbide

   • P. A. Ivanov
   • M. E. Levinshtein
   • A. K. Agarwal

   Review Pages: 861 - 877

2. IV International Conference on Amorphous and Microcrystalline Semiconductors (July 5–7, 2004)

   • E. I. Terukov

   Conference. A Review Pages: 878 - 880

3. Fast exothermic processes in porous silicon

   • S. K. Lazarouk
   • A. V. Dolbik
   • V. E. Borisenko

   Conference. Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 881 - 883

4. Interpretation of the visible photoluminescence of inequisized silicon nanoparticles suspended in ethanol

   • V. E. Ogluzdin

   Conference. Electronic and Optical Properties of Semiconductors Pages: 884 - 890

5. Photoluminescence of erbium-doped aluminum oxide films with embedded silicon nanoparticles

   • S. K. Lazarouk
   • A. V. Mudryi
   • V. A. Labunov

   Conference. Electronic and Optical Properties of Semiconductors Pages: 891 - 893

6. Nanostructuring of crystalline grains of natural diamond using ionizing radiation

   • N. A. Poklonski
   • T. M. Lapchuk
   • I. V. Bachuchin

   Conference. Electronic and Optical Properties of Semiconductors Pages: 894 - 897

7. Permittivity spectra and characteristic energy losses of electrons in ZnO at 100 K

   • V. Val. Sobolev
   • V. V. Sobolev
   • E. I. Terukov

   Conference. Electronic and Optical Properties of Semiconductors Pages: 898 - 903

8. Characterization of an a-Si:H/c-Si interface by admittance spectroscopy

   • A. S. Gudovskikh
   • J. -P. Kleider
   • E. I. Terukov

   Conference. Semiconductor Structures, Interfaces, and Surfaces Pages: 904 - 909

9. Coulomb blockade of the conductivity of SiO_x films due to one-electron charging of a silicon quantum dot in a chain of electronic states

   • M. D. Efremov
   • G. N. Kamaev
   • D. V. Marin

   Conference. Low-Dimensional Systems Pages: 910 - 916

10. Processes of growth of disordered semiconductors in the context of self-organiziation theory

    • S. P. Vikhrov
    • N. V. Bodyagin
    • S. M. Mursalov

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 917 - 923

11. Photoinduced relaxation of metastable states in (a-Si:H):B

    • N. N. Ormont
    • I. A. Kurova
    • G. V. Prokof’ev

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 924 - 927

12. The mechanisms of current transport and properties of a-SiC:H/c-Si heterostructures

    • A. A. Sherchenkov
    • B. G. Budagyan
    • A. V. Mazurov

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 928 - 933

13. Raman spectroscopy study of the carbon structure of a-C:(H, Cu) and a-C:(H, Co) composite films

    • É. A. Smorgonskaya
    • V. I. Ivanov-Omskii

    Amorphous, Vitreous, and Porous Semiconductors Pages: 934 - 940

14. Transport of protons in amorphous hydrogenated carbon

    • V. I. Ivanov-Omskii
    • S. G. Yastrebov

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 941 - 943

15. The effect of erbium and oxygen on the photoluminescence intensity of erbium and the composition of a-SiO_x:(H, Er, O) films deposited by DC magnetron sputtering

    • Yu. K. Undalov
    • E. I. Terukov
    • V. Kh. Kudoyarova

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 944 - 950

16. Structural transformations and optical properties of As₂S₃ chalcogenide glasses

    • I. V. Fekeshgazi
    • K. V. Mai
    • E. I. Borkach

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 951 - 954

17. Electron microscopy study of a chalcogenide-based polycrystalline condensate microstructure: The effect of composition and thickness on internal lattice bending

    • V. Yu. Kolosov
    • L. M. Veretennikov
    • C. L. Schvamm

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 955 - 959

18. The boson peak in Raman spectra of As_xS_1−x glasses

    • D. Arsova
    • Y. C. Boulmetis
    • E. Skordeva

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 960 - 962

19. Reversible photoinduced changes in the spectrum of localized states in AsSe films

    • L. P. Kazakova
    • K. D. Tsendin
    • N. S. Averkiev

    Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 963 - 966

20. Causes of the stability of three-bilayer islands and steps on a Si (111) surface

    • A. V. Zverev
    • I. G. Neizvestny
    • Z. Sh. Yanovitskaya

    Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 967 - 977

21. The properties of amorphous arsenic chalcogenide films modified by rare-earth complexes

    • S. A. Kozyukhin
    • A. R. Fairushin
    • É. N. Voronkov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 978 - 982

22. Interaction of fullerene with single-crystal silicon

    • O. M. Sreseli
    • I. B. Zakharova
    • D. N. Goryachev

    Amorphous, Vitreous, and Porous Semiconductors Pages: 983 - 986

23. In memory of Anatoli\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Robertovich Regel’ (1915–1989)

    Personalia Pages: 987 - 988