Semiconductors

, Volume 39, Issue 8, pp 960–962

The boson peak in Raman spectra of AsxS1−x glasses

  • D. Arsova
  • Y. C. Boulmetis
  • C. Raptis
  • V. Pamukchieva
  • E. Skordeva
Conference. Amorphous, Vitreous, and Porous Semiconductors

DOI: 10.1134/1.2010693

Cite this article as:
Arsova, D., Boulmetis, Y.C., Raptis, C. et al. Semiconductors (2005) 39: 960. doi:10.1134/1.2010693

Abstract

The Raman spectra of AsxS1−x glasses with x < 40 at % (Z < 2.4) have been studied in a wide temperature range (20–300 K). A well resolved boson peak is observed in the low-frequency portion of the spectrum, not withstanding the appearance of floppy modes in the glasses under study. It is shown that the boson peak is characterized by two parameters: intensity and the peak position. A comparison of the intensity variation for the boson peaks indicates that the degree of disorder increases as x decreases. This effect is caused by floppy modes in the glass network and by sulfur phase separation. Studies of reduced boson peaks in the Raman spectra of AsxS1−x glasses confirms the theoretical assumption that the shape of the peaks is independent of composition and temperature.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Pleiades Publishing, Inc. 2005

Authors and Affiliations

  • D. Arsova
    • 1
  • Y. C. Boulmetis
    • 2
  • C. Raptis
    • 2
  • V. Pamukchieva
    • 1
  • E. Skordeva
    • 1
  1. 1.Institute of Solid-State PhysicsBulgarian Academy of SciencesSofiaBulgaria
  2. 2.Department of PhysicsNational Technical University of AthensAthensGreece

Personalised recommendations