Abstract
The optical and electrical properties of thin arsenic chalcogenide As-Se and As-S films modified by rare-earth complexes with various organic ligands (europium trisdipivaloylmethanate Eu(thd)3 and lanthanide diethyldithiocarbamate Ln(ddtc)3 (Ln = Pr, Eu)) have been studied. It is shown that the use of mixed rare-earth complexes possessing saturated vapor pressures close to chalcogenide vapor pressures allows thermal evaporation growth of films that are promising for producing planar optical waveguides. It is found that the introduction of Eu(thd)3 complexes that incorporate oxygen into arsenic selenide decreases the absorptivity in the Urbach edge region and significantly decreases the conductivity activation energy, which is not characteristic of materials of this type. These results are attributed to the effect of oxygen on the medium-range order of the structure matrix.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 8, 2005, pp. 1012–1016.
Original Russian Text Copyright © 2005 by Kozyukhin, Fa\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)rushin, Voronkov.
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Kozyukhin, S.A., Fairushin, A.R. & Voronkov, É.N. The properties of amorphous arsenic chalcogenide films modified by rare-earth complexes. Semiconductors 39, 978–982 (2005). https://doi.org/10.1134/1.2010696
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DOI: https://doi.org/10.1134/1.2010696