Abstract
It is found that rapid oxidation of porous Si (por-Si) layers in air may occur in the form of combustion or explosion. Combustion occurs in por-Si layers thinner than 60 μm and impregnated with potassium nitrate, while explosion is observed in thicker porous layers. It is suggested that explosion develops by a thermal mechanism resulting from an exponential increase in the reaction rate with temperature.
Similar content being viewed by others
References
L. T. Canham, Properties of Porous Silicon (INSPEC, London, 1997).
V. E. Borisenko and S. Ossicini, What is What in the Nanoworld (Wiley-VCH, Weinheim, 2004).
D. Kovalev, V. Y. Timoshenko, N. Kunzner, et al., Phys. Rev. Lett. 87, 68301 (2001).
F. V. Mikules, J. D. Kirtland, and M. J. Sailor, Adv. Mater. 14, 38 (2002).
A. V. Dolbik, A. A. Kovalevskii, S. K. Lazaruk, et al., Izv. Belorus. Inzh. Akad., No. 1 (15)/4, 41 (2003).
A. A. Kovalevskii, A. V. Dolbik, S. K. Lazaruk, and V. A. Labunov, Izv. Belorus. Inzh. Akad., No. 2(18)/2, 47 (2004).
J. Warnatz, U. Maas, and R. W. Dibble, Combustion: Physical and Chemical Fundamentals, Modeling and Simulation, Experiment, Pollutant Formation (Springer, Berlin, 2001; Fizmatlit, Moscow, 2003).
R. Shale, in High Speed Physics, Ed. by von K. Vollrath and G. Thomer (Springer, Vienna, 1967; Mir, Moscow, 1971).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 8, 2005, pp. 917–919.
Original Russian Text Copyright © 2005 by Lazarouk, Dolbik, Jaguiro, Labunov, Borisenko.
Rights and permissions
About this article
Cite this article
Lazarouk, S.K., Dolbik, A.V., Jaguiro, P.V. et al. Fast exothermic processes in porous silicon. Semiconductors 39, 881–883 (2005). https://doi.org/10.1134/1.2010678
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.2010678