Effect of the parameters of sapphire substrates on the crystalline quality of GaN layers Yu. N. DrozdovN. V. VostokovV. I. Shashkin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1 - 3
Properties of the GaSb:Mn layers deposited from laser plasma Yu. A. DanilovE. S. DemidovV. V. Podol’skii Electronic and Optical Properties of Semiconductors Pages: 4 - 7
Effect of the conditions of metal-organic chemical-vapor epitaxy on the properties of GaInAsN epitaxial films V. M. Danil’tsevD. M. GaponovaV. I. Shashkin Electronic and Optical Properties of Semiconductors Pages: 8 - 10
Growth of BGaAs layers on GaAs substrates by metal-organic vapor-phase epitaxy D. A. PryakhinV. M. Danil’tsevS. Rushworth Semiconductor Structures, Interfaces, and Surfaces Pages: 11 - 13
Features of GaN growth attained by metal-organic vapor-phase epitaxy in a low-pressure reactor O. I. KhrykinA. V. ButinV. I. Shashkin Semiconductor Structures, Interfaces, and Surfaces Pages: 14 - 16
Effect of an interfacial oxide layer on the electroluminescence efficiency of metal-quantum-confined semiconductor heterostructures N. V. Baidus’P. B. DeminaE. A. Uskova Low-Dimensional Systems Pages: 17 - 21
Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures V. Ya. AleshkinV. I. GavrilenkoY. -H. Zhang Low-Dimensional Systems Pages: 22 - 26
Long-time photoluminescence kinetics of InAs/AlAs quantum dots in a magnetic field T. S. ShamirzaevA. M. GilinskiiK. S. Zhuravlev Low-Dimensional Systems Pages: 27 - 29
Electroluminescent properties of heterostructures with GaInNas quantum wells A. V. Murel’V. M. Danil’tsevO. I. Khrykin Low-Dimensional Systems Pages: 30 - 32
A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide P. N. BrunkovA. A. GutkinB. R. Semyagin Low-Dimensional Systems Pages: 33 - 36
Effect of the electrochemical modification of a thin Ga(In)As cap layer on the energy spectrum of InAs/GaAs quantum dots I. A. KarpovichA. V. ZdoroveishchevO. E. Khapugin Low-Dimensional Systems Pages: 37 - 40
Intersubband absorption of light in heterostructures with double tunnel-coupled GaAs/AlGaAs quantum wells L. E. Vorob’evV. Yu. PanevinA. Seilmeier Low-Dimensional Systems Pages: 41 - 43
Current oscillations under lateral transport in GaAs/InGaAs quantum well heterostructures A. V. AntonovV. I. GavrilenkoE. A. Uskova Low-Dimensional Systems Pages: 44 - 49
Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules L. E. Vorob’evV. Yu. PanevinP. Werner Low-Dimensional Systems Pages: 50 - 53
Calculation of the states of shallow donors in quantum wells in a magnetic field using plane wave expansion V. Ya. AleshkinL. V. Gavrilenko Low-Dimensional Systems Pages: 54 - 57
The effect of the localization in a quantum well on the lifetime of the states of shallow impurity centers E. E. OrlovaP. HarrisonM. P. Halsall Low-Dimensional Systems Pages: 58 - 61
Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells V. Ya. AleshkinV. I. GavrilenkoY. -H. Zhang Low-Dimensional Systems Pages: 62 - 66
Terahertz luminescence of GaAs-based heterostructures with quantum wells under the optical excitation of donors N. A. BekinR. Kh. ZhukavinV. N. Shastin Low-Dimensional Systems Pages: 67 - 72
Efficient near IR photoluminescence from gallium nitride layers doped with arsenic A. V. AndrianovS. V. NovikovC. T. Foxon Low-Dimensional Systems Pages: 73 - 76
Properties of structures based on laser-plasma Mn-doped GaAs and grown by MOC-hydride epitaxy Yu. V. Vasil’evaYu. A. DanilovA. N. Vinogradov Low-Dimensional Systems Pages: 77 - 81
A study of the properties of the structures with Al nanoclusters incorporated into the GaAs matrix N. V. VostokovS. A. GusevV. I. Shashkin Low-Dimensional Systems Pages: 82 - 85
InGaAs/GaAs quantum dot heterostructures for 3–5 μm IR detectors A. V. AntonovD. M. GaponovaV. I. Shashkin Low-Dimensional Systems Pages: 86 - 88
Study of the photoelectric properties of Ge quantum dots in a ZnSe matrix on GaAs I. G. NeizvestnyS. P. SuprunV. N. Shumsky Low-Dimensional Systems Pages: 89 - 94
Unusual persistent photoconductivity in the InAs/AlSb quantum well Yu. G. SadofyevA. RamamoorthyY. -H. Zhang Low-Dimensional Systems Pages: 95 - 99
Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters I. P. SoshnikovN. N. LedentsovD. Gerthsen Low-Dimensional Systems Pages: 100 - 102
Lateral photoconductivity of AlGaAs/InGaAs structures with quantum wells and self-organized quantum dots under interband illumination O. A. ShegaiA. K. BakarovA. I. Toropov Low-Dimensional Systems Pages: 103 - 106
Spin effects in magnetoresistance induced in an n-InxGa1−x As/GaAs double quantum well by a parallel magnetic field M. V. YakuninG. A. Al’shanskiiL. Ponomarenko Low-Dimensional Systems Pages: 107 - 112
Terahertz oscillator based on nonlinear frequency conversion in a double vertical cavity Yu. A. MorozovI. S. NefedovI. V. Krasnikova Low-Dimensional Systems Pages: 113 - 118
Localization of holes in an InAs/GaAs quantum-dot molecule M. M. SobolevG. E. CirlinYu. G. Musikhin Low-Dimensional Systems Pages: 119 - 123
The engineering and properties of InAs quantum dot molecules in a GaAs matrix Yu. B. SamsonenkoG. E. CirlinA. Andreev Amorphous, Vitreous, and Porous Semiconductors Pages: 124 - 126
Resonant Raman scattering and atomic force microscopy of InGaAs/GaAs multilayer nanostructures with quantum dots M. Ya. ValakhV. V. StrelchukG. J. Salamo Amorphous, Vitreous, and Porous Semiconductors Pages: 127 - 131
Photoluminescence and the Raman scattering in porous GaSb produced by ion implantation Yu. A. DanilovA. A. BiryukovO. Teschke Amorphous, Vitreous, and Porous Semiconductors Pages: 132 - 135
Efficiency of avalanche light-emitting diodes based on porous silicon S. K. LazaroukA. A. LeshokV. E. Borisenko Amorphous, Vitreous, and Porous Semiconductors Pages: 136 - 138
Observation of the middle-infrared emission from semiconductor lasers generating two frequency lines in the near-infrared region of the spectrum V. Ya. AleshkinV. I. GavrilenkoS. M. Nekorkin Physics of Semiconductor Devices Pages: 139 - 141
The resonant terahertz response of a slot diode with a two-dimensional electron channel V. V. PopovG. M. TsymbalovW. Knap Physics of Semiconductor Devices Pages: 142 - 146
Bloch oscillations in superlattices: The problem of a terahertz oscillator Yu. A. RomanovYu. Yu. Romanova Physics of Semiconductor Devices Pages: 147 - 155
The mode competition, instability, and second harmonic generation in dual-frequency InGaAs/GaAs/InGaP lasers V. Ya. AleshkinB. N. ZvonkovVl. V. Kocharovsky Physics of Semiconductor Devices Pages: 156 - 159
