Abstract
The results of studying the special features of the dependence of lateral photoconductivity in AlGaAs/InGaAs structures with quantum dots and quantum wells on the intensity of interband light at low temperatures are reported. It is found that there is a threshold for the increase in photoconductivity. Oscillations of photoconductivity are observed at relatively high pulling fields. The effects of the pulling field and temperature on the photoconductivity are studied. The results are analyzed in terms of the theory of percolation of nonequilibrium charge carriers over localized states, taking into account the relaxation of stresses around quantum dots.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 1, 2005, pp. 115–117.
Original Russian Text Copyright © 2005 by Shegai, Bakarov, Kalagin, Toropov.
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Shegai, O.A., Bakarov, A.K., Kalagin, A.K. et al. Lateral photoconductivity of AlGaAs/InGaAs structures with quantum wells and self-organized quantum dots under interband illumination. Semiconductors 39, 103–106 (2005). https://doi.org/10.1134/1.1852656
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DOI: https://doi.org/10.1134/1.1852656