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A study of the properties of the structures with Al nanoclusters incorporated into the GaAs matrix

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Abstract

It is shown that organometallic vapor-phase epitaxy can be used to form an artificial medium that constitutes a matrix of single-crystal GaAs with incorporated Al nanoparticles. Electrical and optical properties of this medium are studied.

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Authors and Affiliations

  1. Institute for the Physics of Microstructures, Russian Academy of Sciences, Niznhi Novgorod, 603950, Russia

    N. V. Vostokov, S. A. Gusev, V. M. Danil’tsev, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel & V. I. Shashkin

  2. Institute of Applied Physics, Russian Academy of Sciences, Nizhni Novgorod, 603000, Russia

    A. I. Korytin

Authors
  1. N. V. Vostokov
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  2. S. A. Gusev
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  3. V. M. Danil’tsev
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  4. M. N. Drozdov
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  5. Yu. N. Drozdov
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  6. A. I. Korytin
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  7. A. V. Murel
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  8. V. I. Shashkin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 1, 2005, pp. 92–95.

Original Russian Text Copyright © 2005 by Vostokov, Gusev, Danil’tsev, M. Drozdov, Yu. Drozdov Korytin, Murel, Shashkin.

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Vostokov, N.V., Gusev, S.A., Danil’tsev, V.M. et al. A study of the properties of the structures with Al nanoclusters incorporated into the GaAs matrix. Semiconductors 39, 82–85 (2005). https://doi.org/10.1134/1.1852651

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  • DOI: https://doi.org/10.1134/1.1852651

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