Abstract
Photoluminescence in the 1.2–1.4 eV spectral range from GaN:As layers grown on (0001) Al2O3 substrates was observed and studied. The photoluminescence is attributed to radiative recombination in GaAs nanocrystallites, self-organized in the GaN matrix during growth. The photoluminescence intensity attains a maximum at a growth temperature of ∼780°C, which is explained by the competition between several temperature-dependent processes that affect the formation of GaAs nanocrystallites. Sharp emission lines were observed at the high-energy edge of the photoluminescence band. These lines are caused by an emission of bound excitons in the GaAs nanocrystallites and by phonon replicas of the bound-exciton emission. The energies of the corresponding optical phonons are typical of GaAs. The photoluminescence-excitation spectra exhibit features related to resonantly excited free and bound excitons as well as to excitons formed simultaneously with the emission of optical phonons.
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References
J. W. Ager III and W. Walukiewicz, Semicond. Sci. Technol. 17, 741 (2002).
I. A. Buyanova, W. M. Chen, and B. Monemar, MRS Internet J. Nitride Semicond. Res. 6, 2 (2001).
R. Schwabe, W. Seifert, F. Bugge, et al., Solid State Commun. 55, 167 (1985).
S. Sakai, Y. Ueta, and Y. Terauchi, Jpn. J. Appl. Phys., Part 1 32, 4413 (1993).
A. J. Winser, S. V. Novikov, C. S. Davis, et al., Appl. Phys. Lett. 77, 2506 (2000).
B. Gill, A. Morel, T. Taliercio, et al., Appl. Phys. Lett. 79, 69 (2001).
A. V. Andrianov, S. V. Novikov, R. Xia, et al., in Proceedings of 26th International Conference on Physics of Semiconductors (Edinburgh, Scotland, UK, 2002), D19.
A. V. Andrianov, S. V. Novikov, T. Li, et al., Phys. Status Solidi B 238, 204 (2003).
T. H. De Keijser, E. J. Mittemeijer, and H. C. F. Rozendaal, J. Appl. Crystallogr. 16, 309 (1983).
E. W. Williams, Phys. Rev. 168, 922 (1968).
R. L. Willardson and A. C. Beer, in Semiconductors and Semimetals (Academic, New York, 1972), Vol. 8.
T. Makimoto and N. Kobayashi, Appl. Phys. Lett. 67, 688 (1995).
T. Shima, Y. Mikita, S. Kimura, et al., Nucl. Instrum. Methods Phys. Res. B 127–128, 437 (1997).
J. S. Blakemore, J. Appl. Phys. 53, R123 (1982).
E. Gross, S. Permogorov, V. Travnikov, and A. Selkin, J. Phys. Chem. Solids 31, 2595 (1970).
V. A. Kharchenko and M. Rosen, J. Lumin. 70, 158 (1996).
M. Ghanassi, M. C. Schanne-Klein, F. Hache, et al., Appl. Phys. Lett. 62, 78 (1993).
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 1, 2005, pp. 82–86.
Original Russian Text Copyright © 2005 by Andrianov, Novikov, Zhuravlev, Li, Xia, Bull, Harrison, Larkins, Foxon.
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Andrianov, A.V., Novikov, S.V., Zhuravlev, I.S. et al. Efficient near IR photoluminescence from gallium nitride layers doped with arsenic. Semiconductors 39, 73–76 (2005). https://doi.org/10.1134/1.1852649
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DOI: https://doi.org/10.1134/1.1852649