1. Clustering of defects and impurities in hydrogenated single-crystal silicon

   • Kh. A. Abdulin
   • Yu. V. Gorelkinskii
   • S. Zh. Tokmoldin

   Atomic Structures and Nonelectronic Properties of Semiconductors Pages: 239 - 249

2. Rapid thermal annealing of gallium arsenide implanted with sulfur ions

   • V. M. Ardyshev
   • M. V. Ardyshev

   Atomic Structures and Nonelectronic Properties of Semiconductors Pages: 250 - 253

3. The preexponential factor in Mott’s law for variable-range-hopping conduction in lightly compensated p-Hg_0.8Cd_0.2Te crystals

   • V. V. Bogoboyashchii

   Electronic and Optical Properties of Semiconductors Pages: 254 - 258

4. E ₀ photoreflectance spectra of GaAs: Identification of the features related to impurity transitions

   • R. V. Kusmenko
   • É. P. Domashevskaya

   Electronic and Optical Properties of Semiconductors Pages: 259 - 262

5. Temperature dependence of thermoelectric power in n-InSb in a transverse quantizing magnetic field

   • M. M. Gadzhialiev

   Electronic and Optical Properties of Semiconductors Pages: 263 - 264

6. Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films

   • A. N. Georgobiani
   • A. N. Gruzintsev
   • M. O. Vorob’ev

   Electronic and Optical Properties of Semiconductors Pages: 265 - 269

7. Effective exciton mass in III-V semiconductors

   • N. S. Averkiev
   • K. S. Romanov

   Electronic and Optical Properties of Semiconductors Pages: 270 - 272

8. Special features of charge transport in PbGa₂Se₄ crystals

   • B. G. Tagiev
   • N. N. Musaeva
   • R. B. Dzhabbarov

   Electronic and Optical Properties of Semiconductors Pages: 273 - 275

9. Efficiency of the intercalation of aluminum atoms under a monolayer and submonolayer two-dimensional graphite film on a metal

   • N. R. Gall
   • E. V. Rut’kov
   • A. Ya. Tontegode

   Semiconductor Structures, Interfaces, and Surfaces Pages: 276 - 281

10. Simulation of hydrogen penetration into p-type silicon under wet chemical etching

    • O. V. Feklisova
    • E. B. Yakimov
    • N. A. Yarykin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 282 - 285

11. Internal ionization energy in II-VI compounds

    • A. V. Komashchenko
    • V. N. Komashchenko
    • Yu. N. Bobrenko

    Semiconductor Structures, Interfaces, and Surfaces Pages: 286 - 289

12. Influence of the misfit-dislocation screw component on the formation of threading dislocations in semiconductor heterostructures

    • E. M. Trukhanov
    • A. V. Kolesnikov
    • A. K. Gutakovskii

    Semiconductor Structures, Interfaces, and Surfaces Pages: 290 - 297

13. Optical properties of ultradisperse CdSe_xTe_1−x (0≤x≤1) particles in a silicate glass matrix

    • I. V. Bodnar
    • V. S. Gurin
    • K. V. Yumashev

    Low-Dimensional Systems Pages: 298 - 306

14. Soliton shape stabilization in a superlattice with next-to-nearest neighbor spectrum in a field of a nonlinear wave

    • S. V. Kryuchkov
    • É. G. Fedorov

    Low-Dimensional Systems Pages: 307 - 310

15. Resonance transitions between split levels in three-barrier nanostructures and the prospects of using these structures in devices operating in the submillimeter-wave band

    • E. I. Golant
    • A. B. Pashkovskii

    Low-Dimensional Systems Pages: 311 - 318

16. Microwave photoconductivity in nanocrystalline porous titanium oxide subjected to pulsed laser excitation

    • E. A. Konstantinova
    • V. Yu. Timoshenko
    • F. Koch

    Amorphous, Vitreous, and Porous Semiconductors Pages: 319 - 324

17. Special features of recombination of nonequilibrium charge carriers in porous silicon with different nanostructure morphologies

    • M. G. Lisachenko
    • E. A. Konstantinov
    • P. K. Kashkarov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 325 - 329

18. Changes in properties of a 〈porous silicon〉/silicon system during gradual etching off of the porous silicon layer

    • E. F. Venger
    • T. Ya. Gorbach
    • V. A. Chernobai

    Amorphous, Vitreous, and Porous Semiconductors Pages: 330 - 335

19. Carrier transport in porous silicon

    • N. S. Averkiev
    • L. P. Kazakova
    • N. N. Smirnova

    Amorphous, Vitreous, and Porous Semiconductors Pages: 336 - 339

20. Solar cells based on CuIn_1−x Ga_xSe₂ films obtained by pulsed laser evaporation

    • V. F. Gremenok
    • I. V. Bodnar’
    • H. -W. Schock

    Physics of Semiconductor Devices Pages: 340 - 343

21. Analysis of threshold current density and optical gain in InGaAsP quantum well lasers

    • N. A. Pikhtin
    • S. O. Sliptchenko
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 344 - 353

22. The use of SiC triode structures as detectors of nuclear particles

    • N. B. Strokan
    • A. M. Ivanov
    • A. A. Lebedev

    Physics of Semiconductor Devices Pages: 354 - 357

23. Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

    • O. V. Aleksandrov
    • A. O. Zakhar’in
    • Yu. A. Nikolaev

    Physics of Semiconductor Devices Pages: 358 - 361

24. Igor’ Georgievich Neizvestny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) (on his 70th birthday)

    Personalia Pages: 362 - 362