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Solar cells based on CuIn1−x GaxSe2 films obtained by pulsed laser evaporation

  • Physics of Semiconductor Devices
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Abstract

Solar cells based on polycrystalline films of CuIn1−x GaxSe2 solid solutions were produced for the first time by the pulsed laser evaporation of source targets. The current-voltage characteristics of the cells were investigated, and the main photoelectrical parameters were ascertained. The optimal concentration of gallium ensuring maximal conversion efficiency of the thin-film solar cells and the films of the solid solutions with a chalcopyrite structure were determined.

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Authors and Affiliations

  1. Institute of Solid-State and Semiconductor Physics, Belarussian Academy of Sciences, ul. Brovki 17, Minsk, 220072, Belarus

    V. F. Gremenok & I. V. Bodnar’

  2. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. Yu. Rud’

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. V. Rud’

  4. Institut für Physikalische Elektronik, Universität Stuttgart, D-70569, Stuttgart, Germany

    H. -W. Schock

Authors
  1. V. F. Gremenok
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  2. I. V. Bodnar’
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  3. V. Yu. Rud’
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  4. Yu. V. Rud’
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  5. H. -W. Schock
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Additional information

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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 3, 2002, pp. 360–363.

Original Russian Text Copyright © 2002 by Gremenok, Bodnar’, V. Rud’, Yu. Rud’, Schock.

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Gremenok, V.F., Bodnar’, I.V., Rud’, V.Y. et al. Solar cells based on CuIn1−x GaxSe2 films obtained by pulsed laser evaporation. Semiconductors 36, 340–343 (2002). https://doi.org/10.1134/1.1461414

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  • DOI: https://doi.org/10.1134/1.1461414

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