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The preexponential factor in Mott’s law for variable-range-hopping conduction in lightly compensated p-Hg0.8Cd0.2Te crystals

  • Electronic and Optical Properties of Semiconductors
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Abstract

Hopping conduction with variable range was studied in undoped p-Hg0.8Cd0.2Te crystals with the Hg-vacancy concentration varying from 1016 to 4×1017 cm−3 in the temperature range of 4.2–125 K. The temperature and concentration dependences of the preexponential factor ρ0M in Mott’s law was determined. It is found that the temperature dependence of ρ0M is in good agreement with the theoretical calculations performed in the one-particle approximation. At the same time, ρ0M depends heavily on the Hg-vacancy concentration and parameter T 0 in Mott’s law, which is in contradiction with this theory. The experimental dependence of ρ0M on both parameters has a power-law form; the exponent is equal to 2.3–2.4. It is assumed that the concentration dependence of ρ0M is typical of double-charged acceptors. This fact can be explained by the capture of a second hole by the Hg vacancy.

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  1. Kremenchug State Polytechnical University, Kremenchug, 39614, Ukraine

    V. V. Bogoboyashchii

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  1. V. V. Bogoboyashchii
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 3, 2002, pp. 272–277.

Original Russian Text Copyright © 2002 by Bogoboyashchi\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Bogoboyashchii, V.V. The preexponential factor in Mott’s law for variable-range-hopping conduction in lightly compensated p-Hg0.8Cd0.2Te crystals. Semiconductors 36, 254–258 (2002). https://doi.org/10.1134/1.1461397

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  • DOI: https://doi.org/10.1134/1.1461397

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