1. Growth of fractal lithium clusters in germanium

   • S. V. Bulyarskii
   • V. V. Svetukhin
   • P. A. Il’in

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 861 - 863

2. Vibration modes of oxygen dimers in germanium

   • V. V. Litvinov
   • L. I. Murin
   • A. A. Klechko

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 864 - 869

3. Effect of deviations from stoichiometry on electrical conductivity and photoconductivity of CuInSe₂ crystals

   • M. A. Abdullaev
   • Dz. Kh. Magomedova
   • P. P. Khokhlachev

   Electronic and Optical Properties of Semiconductors Pages: 870 - 872

4. The onset of double limiting cycle in the impurity-assisted electric breakdown of a compensated semiconductor with a shorted Hall voltage

   • K. M. Jandieri
   • Z. S. Kachlishvili

   Electronic and Optical Properties of Semiconductors Pages: 873 - 876

5. Preparation and properties of isotopically pure polycrystalline silicon

   • O. N. Godisov
   • A. K. Kaliteevskii
   • P. S. Kop’ev

   Electronic and Optical Properties of Semiconductors Pages: 877 - 879

6. Electrical properties of Cd_xHg_1−x Te/CdZnTe heterostructures

   • A. G. Belov
   • A. I. Belogorokhov
   • V. M. Lakeenkov

   Electronic and Optical Properties of Semiconductors Pages: 880 - 882

7. Native and impurity defects in ZnSe:In single crystals prepared by free growth

   • Yu. F. Vaksman
   • Yu. A. Nitsuk
   • P. V. Shapkin

   Electronic and Optical Properties of Semiconductors Pages: 883 - 889

8. Origin of an absorption band peaked at 5560 cm⁻¹ and related to divacancies in Si_1−x Ge_x

   • Yu. V. Pomozov
   • M. G. Sosnin
   • W. Schröder

   Electronic and Optical Properties of Semiconductors Pages: 890 - 894

9. Photoluminescence kinetics in GaAs under the influence of surface acoustic waves

   • K. S. Zhuravlev
   • A. M. Gilinskii
   • A. E. Nikolaenko

   Electronic and Optical Properties of Semiconductors Pages: 895 - 899

10. Optical band gap of Cd_1−x Mn_xTe and Zn_1−x Mn_xTe semiconductors

    • P. V. Zhukovskii
    • Ya. Partyka
    • A. Rodzik

    Electronic and Optical Properties of Semiconductors Pages: 900 - 903

11. The role of lead in growing Ga_1−X In_XAs_YSb_1−Y solid solutions by liquid-phase epitaxy

    • T. I. Voronina
    • T. S. Lagunova
    • Yu. P. Yakovlev

    Electronic and Optical Properties of Semiconductors Pages: 904 - 911

12. Interface states and deep-level centers in silicon-on-insulator structures

    • I. V. Antonova
    • J. Stano
    • V. A. Skuratov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 912 - 917

13. Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy

    • V. G. Shengurov
    • S. P. Svetlov
    • H. Ellmer

    Semiconductor Structures, Interfaces, and Surfaces Pages: 918 - 923

14. Pulsed laser-stimulated surface acoustic waves in p-CdTe crystals

    • A. Baidullaeva
    • A. I. Vlasenko
    • A. B. Smirnov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 924 - 926

15. Analysis of inherent potential nonuniformities at the extrinsic-semiconductor surface

    • V. B. Bondarenko
    • M. V. Kuz’min
    • V. V. Korablev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 927 - 931

16. Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopy

    • N. N. Faleev
    • Yu. G. Musikhin
    • Y. Takeda

    Low-Dimensional Systems Pages: 932 - 940

17. Optical properties of germanium monolayers on silicon

    • T. M. Burbaev
    • T. N. Zavaritskaya
    • A. I. Nikiforov

    Low-Dimensional Systems Pages: 941 - 946

18. The effect of external factors on photoelectric parameters of amorphous hydrogenated silicon in relation to the initial characteristics of the films

    • N. Rakhimov
    • U. Babakhodzhaev
    • R. Ikramov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 947 - 948

19. Anomalous polarization of Raman scattering by transverse and longitudinal phonons in porous doped GaAs

    • V. N. Denisov
    • B. N. Mavrin
    • V. A. Karavanskii

    Amorphous, Vitreous, and Porous Semiconductors Pages: 949 - 952

20. Effect of temperature on photoconductivity and its decay in microcrystalline silicon

    • A. G. Kazanskii
    • H. Mell
    • P. A. Forsh

    Amorphous, Vitreous, and Porous Semiconductors Pages: 953 - 955

21. X-ray spectroscopic study of electronic structure of amorphous silicon and silicyne

    • A. I. Mashin
    • A. F. Khokhlov
    • N. I. Mashin

    Amorphous, Vitreous, and Porous Semiconductors Pages: 956 - 961

22. Threshold characteristics of λ=1.55 µm InGaAsP/InP heterolasers

    • G. G. Zegrya
    • N. A. Pikhtin
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 962 - 969

23. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO₂-laser radiation

    • V. T. Tulanov
    • Kh. B. Siyabekov
    • K. A. Ortaeva

    Physics of Semiconductor Devices Pages: 970 - 973

24. A study of technological processes in the production of high-power high-voltage bipolar transistors incorporating an array of inclusions in the collector region

    • N. I. Volokobinskaya
    • I. N. Komarov
    • A. S. Yastrebov

    Physics of Semiconductor Devices Pages: 974 - 978

25. Erratum: Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing

    • L. V. Asryan
    • R. A. Suris

    Erratum Pages: 979 - 979