Abstract
It is found that two types of centers are formed in Si1−x Gex single crystals as a result of irradiation with fast electrons: divacancies (V 2) characteristic of silicon and the V *2 centers; the latter are complexes of divacancies V 2 with germanium atoms (V 2Ge). It is shown that an absorption band peaked at about 5560 cm−1 is a superposition of two absorption bands that correspond to the above centers. The V 2 divacancies diffuse during isochronous heat treatment and interact with germanium atoms, thus giving rise to additional V *2 centers. The latter have a higher thermal stability than the V 2 centers do, and their annealing temperature increases with increasing content of germanium.
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References
G. D. Watkins and J. W. Corbett, Phys. Rev. 138, A543 (1965).
J. W. Corbett and G. D. Watkins, Phys. Rev. 138, A555 (1965).
R. C. Young and J. C. Corelli, Phys. Rev. B 5, 1455 (1972).
L. J. Cheng, J. C. Corelli, J. W. Corbett, and G. D. Watkins, Phys. Rev. 152, 761 (1966).
B. G. Svensson and M. Willander, J. Appl. Phys. 62, 2758 (1987).
L. S. Smirnov, Problems in Radiation Technology of Semiconductors (Nauka, Novosibirsk, 1980), p. 20.
V. V. Emtsev and T. V. Mashovets, Impurities and Point Defects in Semiconductors (Radio i Svyaz’, Moscow, 1981), p. 42.
L. J. Cheng and J. Lori, Phys. Rev. 171, 856 (1968).
H. J. Stein, J. Appl. Phys. 45, 1954 (1974).
E. V. Monakhov, A. N. Larsen, and P. Kringhf, J. Appl. Phys. 81, 1180 (1997).
A. N. Larsen, Solid State Phenom. 69–70, 43 (1999).
N. V. Abrosimov, S. N. Rossolenko, V. Alex, et al., J. Cryst. Growth 166, 657 (1996).
N. V. Abrosimov, S. N. Rossolenko, W. Thieme, et al., J. Cryst. Growth 174, 182 (1997).
E. R. Johnson and S. M. Christian, Phys. Rev. 95, 560 (1954).
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1030 (2000) [Semiconductors 34, 994 (2000)].
Y. H. Lee, J. C. Corelli, and J. W. Corbett, Phys. Lett. A 60, 55 (1977).
J. L. Lindström and B. G. Svensson, Mater. Res. Soc. Symp. Proc. 59, 45 (1986).
G. Davies, E. C. Lightowlers, R. C. Newman, and A. S. Oates, Semicond. Sci. Technol. 2, 524 (1987).
P. Stallinga, P. Johannesen, S. Herstrom, et al., Phys. Rev. B 58, 3842 (1998).
M. Fanciulli and J. R. Byberg, Phys. Rev. B 61, 2657 (2000).
A. Brelot and J. Charlemagne, in Proceedings of the International Conference on Radiation Effects in Semiconductors, London, 1971, p. 161.
L. I. Khirunenko, V. I. Shakhovtsov, V. K. Shinkarenko, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 21, 562 (1987) [Sov. Phys. Semicond. 21, 345 (1987)].
M. G. Sosnin, V. I. Shakhovtsov, and V. L. Shindich, Fiz. Tekh. Poluprovodn. (Leningrad) 15, 786 (1981) [Sov. Phys. Semicond. 15, 448 (1981)].
B. G. Svensson, J. Svensson, J. L. Lindström, et al., Appl. Phys. Lett. 51, 2257 (1987).
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 8, 2001, pp. 927–931.
Original Russian Text Copyright © 2001 by Pomozov, Sosnin, Khirunenko, Abrosimov, Schröder.
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Pomozov, Y.V., Sosnin, M.G., Khirunenko, L.I. et al. Origin of an absorption band peaked at 5560 cm−1 and related to divacancies in Si1−x Gex . Semiconductors 35, 890–894 (2001). https://doi.org/10.1134/1.1393022
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DOI: https://doi.org/10.1134/1.1393022