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The role of lead in growing Ga1−X InXAsYSb1−Y solid solutions by liquid-phase epitaxy

  • Electronic and Optical Properties of Semiconductors
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Abstract

The electrical properties of Ga1−X InXAsYSb1−Y (X=0.14–0.27) solid solutions grown from a Pb-containing solution-melt were investigated for the first time. Three acceptor levels were found to exist, specifically, a shallow level with the activation energy E A1≈0.008–0.015 eV, and two deep levels E A2≈0.024–0.033 eV and E A3≈0.07 eV. It is demonstrated that the use of Pb makes it possible to obtain undoped solid solutions with a low concentration of defects and impurities and with high carrier mobility.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, D. A. Vasyukov & Yu. P. Yakovlev

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  1. T. I. Voronina
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  2. T. S. Lagunova
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  3. E. V. Kunitsyna
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  4. Ya. A. Parkhomenko
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  5. D. A. Vasyukov
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  6. Yu. P. Yakovlev
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 8, 2001, pp. 941–947.

Original Russian Text Copyright © 2001 by Voronina, Lagunova, Kunitsyna, Parkhomenko, Vasyukov, Yakovlev.

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Voronina, T.I., Lagunova, T.S., Kunitsyna, E.V. et al. The role of lead in growing Ga1−X InXAsYSb1−Y solid solutions by liquid-phase epitaxy. Semiconductors 35, 904–911 (2001). https://doi.org/10.1134/1.1393025

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  • DOI: https://doi.org/10.1134/1.1393025

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