Abstract
Epitaxial silicon layers codoped with erbium and oxygen were grown by molecular-beam epitaxy using a silicon sublimation source. For growing the erbium-doped silicon layers, two types of impurity sources were used: (i) erbium-doped silicon plates were used as a source of fluxes of Er and Si atoms; and (ii) metallic erbium plates were used as an impurity-vapor source in combination with the silicon sublimation source. If gaseous oxygen was used for in situ codoping with erbium and oxygen, then concentrations ranging from 1018 to 1020 cm−3 were attained. When oxygen is in the growth chamber, the erbium-entrapment efficiency of a layer increases substantially, with the surface segregation of erbium also being suppressed by oxidation.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 8, 2001, pp. 954–959.
Original Russian Text Copyright © 2001 by Shengurov, Svetlov, Chalkov, Maksimov, Krasil’nik, Andreev, Stepikhova, Shengurov, Palmetshofer, Ellmer.
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Shengurov, V.G., Svetlov, S.P., Chalkov, V.Y. et al. Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy. Semiconductors 35, 918–923 (2001). https://doi.org/10.1134/1.1393027
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DOI: https://doi.org/10.1134/1.1393027