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Analysis of inherent potential nonuniformities at the extrinsic-semiconductor surface

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The concept of an inherent dimensional effect in depleted semiconductor layers (comparability of the characteristic scale of a depleted layer to an average distance between electrically active defects) is introduced. Inherent nonuniformities of an electric field and the potential at the semiconductor surface are determined for intrinsic and impurity surface states. The dependence of these nonuniformities on surface and bulk parameters is considered.

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References

  1. I. S. Zhuguleva and V. P. Smilga, in Proceedings of the V Conference on Surface Forces (Nauka, Moscow, 1974), p. 220.

    Google Scholar 

  2. S. G. Dmitriev and Sh. M. Kogan, Fiz. Tverd. Tela (Leningrad) 21(1), 29 (1979) [Sov. Phys. Solid State 21, 17 (1979)].

    Google Scholar 

  3. D. Arnold and K. Hess, J. Appl. Phys. 61(11), 5178 (1987).

    Article  ADS  Google Scholar 

  4. J. H. Davies and J. A. Nixon, Phys. Rev. B 39(5), 3423 (1989).

    Article  ADS  Google Scholar 

  5. V. B. Bondarenko, Yu. A. Kudinov, S. G. Ershov, and V. V. Korablev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30(11), 2068 (1996) [Semiconductors 30, 1078 (1996)].

    Google Scholar 

  6. V. B. Bondarenko, Yu. A. Kudinov, S. G. Ershov, and V. V. Korablev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32(5), 554 (1998) [Semiconductors 32, 495 (1998)].

    Google Scholar 

  7. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).

    Google Scholar 

  8. D. Hudson, Statistics. Lectures on Elementary Statistics and Probability (Geneva, 1964; Mir, Moscow, 1967), CERN Report.

  9. L. D. Landau and E. M. Lifshitz, Course of Theoretical Physics, Vol. 8: Electrodynamics of Continuous Media (Nauka, Moscow, 1982; Pergamon, New York, 1984).

    Google Scholar 

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Authors and Affiliations

  1. St. Petersburg State Technical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. B. Bondarenko & V. V. Korablev

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. V. Kuz’min

Authors
  1. V. B. Bondarenko
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  2. M. V. Kuz’min
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  3. V. V. Korablev
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Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 8, 2001, pp. 964–968.

Original Russian Text Copyright © 2001 by Bondarenko, Kuz’min, Korablev.

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Bondarenko, V.B., Kuz’min, M.V. & Korablev, V.V. Analysis of inherent potential nonuniformities at the extrinsic-semiconductor surface. Semiconductors 35, 927–931 (2001). https://doi.org/10.1134/1.1393029

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  • DOI: https://doi.org/10.1134/1.1393029

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