Estimation of the thermal band gap of a semiconductor from seebeck measurements H. J. GoldsmidJ. W. Sharp Regular Issue Paper Pages: 869 - 872
Structural study of GaN grown on (001) GaAs by organometallic vapor phase epitaxy In-Tae BaeTae-Yeon SeongEun Kyu Kim Regular Issue Paper Pages: 873 - 877
Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates M. L. SeafordP. J. HesseK. G. Eyink Regular Issue Paper Pages: 878 - 880
Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer J. SchäferA. P. YoungA. Franciosi Regular Issue Paper Pages: 881 - 886
Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy Y. RenM. MicovicT. S. Mayer Regular Issue Paper Pages: 887 - 893
Phase equilibria in In-Metal-As systems: Systematic trends in phase diagram topology and implications for the development of contact materials to InAs D. Swenson Regular Issue Paper Pages: 894 - 901
Electric current effects on Sn/Ag interfacial reactions Chin-Ming ChenSinn-Wen Chen Regular Issue Paper Pages: 902 - 906
Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures Wataru TamuraOsamu ItohJun-Ichi Nishizawa Regular Issue Paper Pages: 907 - 911
Forming solder joints by sintering eutectic tin-lead solder paste Mark A. PalmerChristy N. AlexanderBrian Nguyen Regular Issue Paper Pages: 912 - 915
Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium S. A. StockmanJ. -W. HuangB. W. Liang Regular Issue Paper Pages: 916 - 925
Low temperature MBE of GaAs: A theoretical investigation of RHEED Oscillations K. NatarajanR. VenkatD. L. Dorsey Regular Issue Paper Pages: 926 - 931