Abstract
Using solid source molecular beam epitaxy (MBE) of gallium antimonide (GaSb) and indium antimonide (InSb), we have demonstrated1 the ability to grow dislocation free lattice mismatched materials on gallium arsenide (GaAs) substrates formed by a twist bonding process. Lo et al.2 proposed that it would be possible to create a compliant universal substrate capable of allowing the epitaxial growth of lattice mismatched materials without dislocations.
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Seaford, M.L., Hesse, P.J., Tomich, D.H. et al. Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates. J. Electron. Mater. 28, 878–880 (1999). https://doi.org/10.1007/s11664-999-0213-9
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DOI: https://doi.org/10.1007/s11664-999-0213-9