HgCdTe molecular beam epitaxy technology: A focus on material properties Owen K. WuD. M. JambaC. A. Cockrum OriginalPaper Pages: 423 - 429
Precise control of HgCdTe growth conditions for molecular beam epitaxy Masaya KawanoTokuhito SasakiNaoki Oda OriginalPaper Pages: 431 - 436
Metalorganic vapor phase epitaxyin-situ growth of p-on-n and n-on-p Hg1-xCdxTe junction photodiodes using tertiarybutylarsine as the acceptor source V. RaoH. EhsaniM. B. Reine OriginalPaper Pages: 437 - 443
Application of spectroscopic ellipsometry for real-time control of CdTe and HgCdTe growth in an OMCVD system S. Dakshina MurthyI. B. BhatP. He OriginalPaper Pages: 445 - 449
Growth of high quality CdTe and ZnTe on Si substrates using organometallic vapor phase epitaxy Wen-Sheng WangIshwara Bhat OriginalPaper Pages: 451 - 455
IntegratedIn Situ wafer and system monitoring for the growth of CdTe/ZnTe/GaAs/Si for mercury cadmium telluride epitaxy S. J. C. IrvineJ. BajajH. Glass OriginalPaper Pages: 457 - 465
Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays S. M. JohnsonT. J. de LyonJ. A. Roth OriginalPaper Pages: 467 - 473
Suppression of twin formation in CdTe(111)B epilayers grown by molecular beam epitaxy on misoriented Si(001) Y. P. ChenJ. P. FaurieN. Otsuka OriginalPaper Pages: 475 - 481
Large area depositon of Cd1-xZnxTe on GaAs and Si substrates by metalorganic chemical vapor deposition N. H. KaramR. SudharsananN. A. El-Masry OriginalPaper Pages: 483 - 489
Monitoring vertical bridgman-stockbarger growth of cadmium telluride by an eddy current technique Gary J. RosenFrederick M. CarlsonJohn P. Wallace OriginalPaper Pages: 491 - 495
CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe J. P. TowerS. P. TobinC. K. Ard OriginalPaper Pages: 497 - 504
Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy W. J. EversonC. K. ArdH. F. Schaake OriginalPaper Pages: 505 - 510
Copper outdiffusion from CdZnTe substrates and its effect on the properties of metalorganic chemical vapor deposition-grown HgCdTe R. KorensteinR. J. OlsonC. A. Castro OriginalPaper Pages: 511 - 514
Resonance lonization spectroscopy for quantitative and sensitive surface and bulk measurements of impurities in II-VI materials S. SenJ. E. StannardG. I. Bekov OriginalPaper Pages: 515 - 519
Molecular beam epitaxy HgCdTe growth-induced void defects and their effect on infrared photodiodes J. M. AriasM. ZandianR. E. De Wames OriginalPaper Pages: 521 - 524
Dislocation profiles in HgCdTe(100) on GaAs(100) grown by metalorganic chemical vapor deposition H. NishinoS. MurakamiH. Takigawa OriginalPaper Pages: 533 - 537
The minority carrier lifetime in doped and undoped p-type Hg0.78Cd0.22Te liquid phase epitaxy films M. C. ChenL. ColomboJ. H. Tregilgas OriginalPaper Pages: 539 - 544
Minority carrier lifetime in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy P. S. WijewarnasuriyaM. D. LangeJ. P. Faurie OriginalPaper Pages: 545 - 549
Band structure, magneto-transport, and magneto-optical properties of lnAs-Ga1-xlnxSb superlattices J. R. MeyerC. A. HoffmanL. R. Ram-Mohan OriginalPaper Pages: 551 - 557
Photoresponse study of normal incidence detection in p-type GaAs/AIGaAs multiple quantum wells G. J. BrownF. SzmulowiczS. M. Hegde OriginalPaper Pages: 559 - 564
Process modeling and simulation for Hg1-xCdxTe. Part I: Status of stanford university mercury cadmium telluride process simulator José L. MeléndezC. R. Helms OriginalPaper Pages: 565 - 572
Process modeling and simulation for Hg1-xCdxTe. Part II: Self-diffusion, interdiffusion, and fundamental mechanisms of point-defect interactions in Hg1-xCdxTe José L. MeléndezC. R. Helms OriginalPaper Pages: 573 - 579
Studies on the diffusion of zinc and iodine into CdTe E. D. JonesJ. C. ClarkA. W. Brinkman OriginalPaper Pages: 581 - 585
Variation of arsenic diffusion coefficients in HgCdTe alloys with temperature and hg pressure: Tuning of p on n double layer heterojunction diode properties D. ChandraM. W. GoodwinL. K. Magel OriginalPaper Pages: 599 - 608
Enhanced arsenic diffusion and activation in HgCdTe S. H. ShinJ. M. AriasR. E. De Wames OriginalPaper Pages: 609 - 615
P-type doping of double layer mercury cadmium telluride for junction formation L. O. BubulacD. D. EdwallS. H. Shin OriginalPaper Pages: 617 - 624
Annealing experiments in heavily arsenic-doped (Hg,Cd)Te H. R. VydyanathL. S. LichtmannP. Faurie OriginalPaper Pages: 625 - 634
Transport studies in narrow-gap semiconductors revisited Srinivasan KrishnamurthyArden Sher OriginalPaper Pages: 641 - 646
Metalorganic chemical vapor deposition CdTe passivation of HgCdTe Y. NemirovskyN. AmirL. Djaloshinski OriginalPaper Pages: 647 - 654
Investigation of epitaxial P-p CdTe/Hg0.775Cd0.225Te heterojunctions by capacitance-voltage profiling V. ArielV. GarberG. Cinader OriginalPaper Pages: 655 - 659
Metalorganic chemical vapor deposition of HgCdTe for photodiode applications P. MitraT. R. SchimertM. B. Reine OriginalPaper Pages: 661 - 668
Independently accessed back-to-back HgCdTe photodiodes: A new dual-band infrared detector M. B. ReineP. W. NortonV. Rao OriginalPaper Pages: 669 - 679
Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes M. ZandianJ. G. PaskoS. H. Shin OriginalPaper Pages: 681 - 684
Reflectance and photoreflectance for in-situ monitoring of the molecular beam epitaxial growth of CdTe and Hg-based materials Zhonghai YuM. A. MattsonC. J. SummersBenz OriginalPaper Pages: 685 - 690
Optical properties of undoped and iodine-doped CdTe N. C. GilesJaesun LeeC. J. Summers OriginalPaper Pages: 691 - 696
A comparison of techniques for nondestructive composition measurements in CdZnTe substrates S. P. TobinJ. P. TowerB. K. Tanner OriginalPaper Pages: 697 - 705
Investigation of monolayer roughness in HgTe-CdTe superlattices J. R. MeyerK. A. HarrisN. Otsuka OriginalPaper Pages: 707 - 712
