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Process modeling and simulation for Hg1-xCdxTe. Part II: Self-diffusion, interdiffusion, and fundamental mechanisms of point-defect interactions in Hg1-xCdxTe

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Abstract

The Hg0.8Cd0.2Te type-conversion, Hg self-diffusion and interdiffusion processes are analyzed in the context of a first order reaction kinetics approach. Sets of nonlinear, stiffly coupled continuity equations are presented which describe the underlying physics, and their solutions model the observed macroscopic behavior. It is demonstrated that the Frenkel pair mechanism interactions dominated by the cation sublattice, in conjunction with basic diffusive and drift properties of the ionized point defects, comprise the basic processes which effect all macroscopic phenomena discussed. Existing experimental results are reviewed and apparent discrepancies discussed. Use is made of the Stanford University mercury cadmium telluride process simulator to provide quantitative and insightful examples of important results.

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References

  1. N.A. Archer, H.D. Palfrey and A.F.W. Willoughby,J. Electron. Mater. 22, 967 (1993).

    CAS  Google Scholar 

  2. N.A. Archer, H.D. Palfrey and A.F.W. Willoughby,J. Cryst. Growth 117, 177 (1992).

    Article  CAS  Google Scholar 

  3. N. Archer and H. Palfrey,J. Electron. Mater. 20, 419 (1991).

    CAS  Google Scholar 

  4. Mei-FanSungTang, Ph.D. Thesis, Stanford University (1987).

  5. D.A. Stevenson and M.-F.S. Tang,J. Vac. Sci. Technol. B 9, 1615 (1991).

    Google Scholar 

  6. M. Brown and A.F.W. Willoughby,J. Cryst. Growth 59, 27 (1982).

    Article  CAS  Google Scholar 

  7. CL. Jones, M.J.T. Quelch, P. Capper and J.J. Gosney,J. Appl. Phys. 53 (1992).

  8. H.F. Schaake,J. Electron. Mater. 14, 513 (1985).

    CAS  Google Scholar 

  9. H.R. Vydyanath,J. Electrochem. Soc. 128, 2609 (1981).

    Article  CAS  Google Scholar 

  10. M. Berding and A. Sher,J. Electron. Mater. 22,1005 (1993).

    CAS  Google Scholar 

  11. John-Sea Chen, Ph.D. Thesis, University of Southern California (1985).

  12. J.L. Meléndez and C.R. Helms, J. Electron. Mater. 22, 999 (1993).

    Google Scholar 

  13. Hal R. Yeager and Robert W. Dutton,IEEE Trans. Electron Dev. ED-32, 1964 (1985).

    CAS  Google Scholar 

  14. P.M. Fahey, P.B. Griffin and J.D. Plummer,Rev. Mod. Phys. 61,289(1989).

    Article  CAS  Google Scholar 

  15. S.T. Dunham,J. Electrochem. Soc. 139, 2628 (1992).

    Article  CAS  Google Scholar 

  16. S.M. Hu,J. Appl. Phys. 57, 1069 (1985).

    Article  CAS  Google Scholar 

  17. M. Hu,J. Appl. Phys. 57, 4527 (1985).

    Article  CAS  Google Scholar 

  18. H.G. Robinson et al.,J. Appl. Phys. 71, 2615 (1992).

    Article  CAS  Google Scholar 

  19. R.F. Lever and F.F. Morehead,J. Appl.Phys. 73,1139(1993).

    Article  CAS  Google Scholar 

  20. J.L. Meléndez and C.R. Helms, Part I,J. Electron. Mater. 24, 565 (1995).

    Google Scholar 

  21. M.-F.S. Tang and D.A. Stevenson,J. Vac. Sci. Technol. A 6, 2650 (1988).

    Article  CAS  Google Scholar 

  22. M.-F.S. Tang and D. A. Stevenson,J. Vac. Sci. Technol. A 7, 544(1989).

    Article  CAS  Google Scholar 

  23. M. Brown and A.F.W. Willoughby,J. Vac. Sci. Technol. A 1, 1641 (1983).

    Article  CAS  Google Scholar 

  24. D. Shaw,Semicond. Sci. Technol. 7, 1230 (1992).

    Article  CAS  Google Scholar 

  25. H.D. Palfrey,J. Cryst. Growth 94, 778 (1989).

    Article  CAS  Google Scholar 

  26. Paul Shewman,Diffusion in Solids, (Warrendale, PA: The Minerals, Metals and Materials Society, 1989).

    Google Scholar 

  27. A.D. LeClaire and A. Rabinovitch,J. Phys. C: Solid State Phys. 14, 3863 (1981).

    Article  CAS  Google Scholar 

  28. R.K. Sharma, S.K. Mehta, V.K. Singh, G. Prasad and B.B. Sharma,Crys. Prop. Prep. 22-25, Part II, 885 (1989).

    Google Scholar 

  29. W.F.H. Micklethwaite,Semiconductor and Semimetals, ed. R.K. Willardson and A.C. Beer, (New York: Academic Press, 1981), p. 47.

    Google Scholar 

  30. B.E. Bartlett et al.,J. Cryst. Growth 49, 600 (1980).

    Article  CAS  Google Scholar 

  31. H.F. Schaake, J.H. Tregilgas, J.D. Beck, M.A. Kinch andB.E. Gnade,J. Vac. Sci. Technol. A 3 (1), 143 (1985).

    Article  CAS  Google Scholar 

  32. H.F. Schaake, J.H. Tregilgas, A. J. Lewis and P.M. Everett,J. Vac. Sci. Technol. A 1 (3) 1625 (1983).

    Article  CAS  Google Scholar 

  33. V.V. Bogoboyashchii, A.I. Elizarov, V.I. Ivanov-Omskii and V.A. Petryakov,Sov. Phys. Semicond. 21 (8), 888, (1987).

    Google Scholar 

  34. D.T. Dutton, E. O’Keefe, P. Capper, C.L. Jones, S. Mugford and C. Ard,Semicond. Sci. Technol. 8, S266 (1993).

    Article  CAS  Google Scholar 

  35. H.R. Vydyanath,J. Vac. Sci. Technol. B 9, 1716 (1991).

    Article  CAS  Google Scholar 

  36. J.L. Schmit and E.L. Stelzer,J. Electron. Mater. 7,65 (1968).

    Google Scholar 

  37. W. Scott, E.L. Stelzer and R. J. Hager,J. Appl. Phys. 47,1408 (1976).

    Article  CAS  Google Scholar 

  38. E.D. Jones, V. Thanbipillai and J.B. Mullin,J. Cryst. Growth 118, 1 (1992).

    Article  CAS  Google Scholar 

  39. C.-H. Su, P.-K. Liao and R.F. Brebrick,J. Electron. Mater. 12, 771 (1983).

    CAS  Google Scholar 

  40. R.F. Brebrick and J.P. Schwartz,J. Electron. Mater. 9, 771 (1980).

    Article  Google Scholar 

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Author notes

  1. José L. Meléndez

    Present address: Texas Instruments, Inc., P.O. Box 655936, 75265, Dallas, TX

Authors and Affiliations

  1. Department of Electrical Engineering, Stanford University, 94305, Stanford, CA

    José L. Meléndez & C. R. Helms

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  1. José L. Meléndez
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  2. C. R. Helms
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Meléndez, J.L., Helms, C.R. Process modeling and simulation for Hg1-xCdxTe. Part II: Self-diffusion, interdiffusion, and fundamental mechanisms of point-defect interactions in Hg1-xCdxTe. J. Electron. Mater. 24, 573–579 (1995). https://doi.org/10.1007/BF02657965

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  • DOI: https://doi.org/10.1007/BF02657965

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