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HgCdTe molecular beam epitaxy technology: A focus on material properties

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Abstract

HgCdTe MBE technology is becoming a mature growth technology for flexible manufacturing of short-wave, medium-wave, long-wave, and very long-wave infrared focal plane arrays. The main reason that this technology is getting more mature for device applications is the progress made in controlling the dopants (both n-type and p-type in-situ) and the success in lowering the defect density to less than 2 x 105/cm2 in the base layer. In this paper, we will discuss the unique approach that we have developed for growing As-doped HgCdTe alloys with cadmium arsenide compound. Material properties including composition, crystallinity, dopant activation, minority carrier lifetime, and morphology are also discussed. In addition, we have fabricated several infrared focal plane arrays using device quality double layers and the device results are approaching that of the state-of-the-art liquid phase epitaxy technology.

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Authors and Affiliations

  1. Hughes Research Laboratories, 90265, Malibu, CA

    Owen K. Wu, D. M. Jamba & G. S. Kamath

  2. Santa Barbara Research Center, 93117, Goleta, CA

    G. R. Chapman, S. M. Johnson, J. M. Peterson, K. Kosai & C. A. Cockrum

Authors
  1. Owen K. Wu
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  2. D. M. Jamba
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  3. G. S. Kamath
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  4. G. R. Chapman
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  5. S. M. Johnson
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  6. J. M. Peterson
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  7. K. Kosai
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  8. C. A. Cockrum
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Wu, O.K., Jamba, D.M., Kamath, G.S. et al. HgCdTe molecular beam epitaxy technology: A focus on material properties. J. Electron. Mater. 24, 423–429 (1995). https://doi.org/10.1007/BF02657943

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  • DOI: https://doi.org/10.1007/BF02657943

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