Journal of Electronic Materials

, Volume 24, Issue 5, pp 565–572 | Cite as

Process modeling and simulation for Hg1-xCdxTe. Part I: Status of stanford university mercury cadmium telluride process simulator

  • José L. Meléndez
  • C. R. Helms


Details are provided concerning the basic point defect parameter set of the Stanford University mercury cadmium telluride process simulator (SUMerCad). The Hg interstitial and vacancy parameters are presented and justified for x = 0.2 material. In particular, values for the thermodynamic limits, diffusion coefficients, recombination rates, generation rates, and boundary conditions are specified and their determination methodology is reviewed. The parameters have been determined for overall consistency with a specific pool of experimental results which include studies of Hg self-diffusion, type-conversion, and the existence region. Our presentation will review the current state of the Hg1-xCdxTe modeling effort, and outline the future direction of the simulator, providing examples and discussion. Finally, some issues related to the future development of SUMerCad are discussed, including electric field effects, general boundary conditions, alternative junction formation processes, extended defects, and interdiffusion.

Key words:

Diffusion HgCdTe Modeling Simulation 


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Copyright information

© The Metallurgical of Society of AIME 1995

Authors and Affiliations

  • José L. Meléndez
    • 1
  • C. R. Helms
    • 1
  1. 1.Department of Electrical EngineeringStanford UniversityStanford

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