Coarsening of three-dimensional droplets by two-dimensional diffusion: Part I. Experiment J. R. RogersJ. P. DowneyM. E. Glicksman Special Issue Paper Pages: 999 - 1006
Coarsening of three-dimensional droplets by two-dimensional diffusion: Part II. Theory V. E. FradkovS. S. ManiD. O. Frazier Special Issue Paper Pages: 1007 - 1013
Effect of dopants on arsenic precipitation in GaAs deposited at low temperatures V. MahadevM. R. MellochG. L. Liedl Special Issue Paper Pages: 1015 - 1020
Interactions of dislocations and antiphase (inversion) domain boundaries in III–V/IV heteroepitaxy Eric P. Kvam Special Issue Paper Pages: 1021 - 1026
Microstructural transitions in Titanium-Aluminum thin film multilayers Rajiv AhujaHamish L. Fraser Special Issue Paper Pages: 1027 - 1034
Transmission electron microscopy detection of microtexture variations and their effects on thin film stability Karen E. HarrisAlexander H. King Special Issue Paper Pages: 1035 - 1041
Microstructure of sputtered epitaxial Ni0.80Fe0.20/NixCO1−xO exchange coupled bilayers on α-Al2O3 (0001) W. CaoG. ThomasA. E. Berkowitz Special Issue Paper Pages: 1043 - 1046
The effect of substrate surface roughness on the fracture toughness of Cu/96.5Sn-3.5Ag solder joints E. I. StromswoldR. E. PrattD. J. Quesnel Regular Issue Paper Pages: 1047 - 1053
A simplified model describing enhanced growth rates during vapor phase selective epitaxy M. F. ZyburaS. H. JonesJ. Durgavich Regular Issue Paper Pages: 1055 - 1059
(AlGa)As grown by low pressure metalorganic vapor phase epitaxy using a N2 carrier M. HollfelderHilde HardtdegenH. Lüth Regular Issue Paper Pages: 1061 - 1065
Effect of nitridation on the electrical properties of W:Ti resistors E. Lisicka-SkrzekW. CoyneO. Berolo Regular Issue Paper Pages: 1067 - 1070
Current-voltage characteristics of electric contacts on p-type ZnSe Z. YangJ. F. Schetzina Regular Issue Paper Pages: 1071 - 1074
The effects of deposition temperature on the interfacial properties of SiH4 reduced blanket tungsten on TiN glue layer Young J. LeeChong-Ook ParkJohn S. Chun Regular Issue Paper Pages: 1075 - 1080
Gas composition dependence of silicon nitride used as gallium diffusion barrier during GaAs molecular beam epitaxy growth on Si complementary metal oxide semiconductor J. A. WalkerK. W. GoossenW. Y. Jan Letters Section Pages: 1081 - 1083