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(AlGa)As grown by low pressure metalorganic vapor phase epitaxy using a N2 carrier

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Abstract

We have studied the growth of AlxGa1−xAs (0.24<x<0.34) using a N2 carrier in low pressure metalorganic vapor phase epitaxy. Growth temperature, gas velocity, and V/III ratio were varied to achieve optimum growth conditions. Layers with excellent morphology and electrical and optical properties comparable to samples grown using standard conditions (with a H2 carrier) can be deposited in a nitrogen ambient. Al0.24Ga0.76As bulk material grown on an AlAs buffer layer with a background doping of 1.3×1016 cm−3 showed Hall mobilities of 4500 and 2300 cm2/Vs at 77 and 300K. Photoluminescence studies at 2K revealed strong bound exciton transitions with a full width at half maximum of 5.2 meV for Al0.29Ga0.71AS.

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Authors and Affiliations

  1. Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, Postfach 1913, 52425, Jülich, Germany

    M. Hollfelder, Hilde Hardtdegen, R. Meyer, R. Carius & H. Lüth

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  1. M. Hollfelder
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  2. Hilde Hardtdegen
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  3. R. Meyer
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  4. R. Carius
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  5. H. Lüth
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Hollfelder, M., Hardtdegen, H., Meyer, R. et al. (AlGa)As grown by low pressure metalorganic vapor phase epitaxy using a N2 carrier. J. Electron. Mater. 23, 1061–1065 (1994). https://doi.org/10.1007/BF02650376

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  • DOI: https://doi.org/10.1007/BF02650376

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