Abstract
We have measured the effect of deposition parameters upon the utility of plasma enhanced chemical vapor depositon silicon nitride as a gallium diffusions barrier during molecular beam epitaxy growth of gallium arsenide on silicon submicron complementary metal oxide semiconductor electronics. It was found that the conditions under which the silicon nitride is deposited severely impact the ability of these films to be used as a diffusion barrier, with the most critical dependence upon the silane to nitrogen gas ratio.
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Walker, J.A., Goossen, K.W., Cunningham, J.E. et al. Gas composition dependence of silicon nitride used as gallium diffusion barrier during GaAs molecular beam epitaxy growth on Si complementary metal oxide semiconductor. J. Electron. Mater. 23, 1081–1083 (1994). https://doi.org/10.1007/BF02650380
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DOI: https://doi.org/10.1007/BF02650380