Effects of pressure and temperature on epitaxial growth of InP on non-planar substrates using OMVPE Jeong-Soo KimJi-Beom YooYong-Tak Lee OriginalPaper Pages: 251 - 256
Localized deposition of GaAs/GaInP heterostructures using LP-MOVPE M. MaassenO. KayserP. Balk OriginalPaper Pages: 257 - 264
Investigation and optimization of InGaAs/InP heterointerfaces grown by chemical beam epitaxy using spectroscopic ellipsometry and photoluminescence M. E. SherwinF. L. TerryG. I. Haddad OriginalPaper Pages: 269 - 275
Low pressure and low temperature gallium arsenide homoepitaxy employing in-situ generated arsine B. G. PihlstromT. Y. ShengG. J. Collins OriginalPaper Pages: 277 - 279
Selective growth of GaAs and GaAlAs by Cl-assisted OMVPE at atmospheric pressure R. AzoulayL. DugrandA. M. Pougnet OriginalPaper Pages: 281 - 288
Multi-wafer growth of highly uniform InGaP/GaAs by low pressure MOVPE M. A. McKeeT. McGivneyB. C. Rose OriginalPaper Pages: 289 - 292
Optical and structural properties of MOVPE grown GaxIn1−xAs/InP strained multiple quantum well atructures R. MeyerHilde HardtdegenB. Meyer OriginalPaper Pages: 293 - 298
OMVPE regrowth of CH3I-vapor-etched GaAs C. A. WangC. W. KruegerR. A. Brown OriginalPaper Pages: 299 - 304
Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE T. KikkawaH. TanakaJ. Komeno OriginalPaper Pages: 305 - 315
Growth of Ga x In1−x As y P1−y using ethyldimethylindium andt-butylphophine P. R. SharpsJ. B. PosthillM. L. Timmons OriginalPaper Pages: 317 - 321
Dopant incorporation in GaAs and AlGaAs grown by MOMBE for high speed devices C. R. AbernathyF. RenJ. Song OriginalPaper Pages: 323 - 327
Emission infrared spectroscopy for in situ analysis of the OMVPE growth surface D. MazzareseK. A. JonesW. C. Conner OriginalPaper Pages: 329 - 333
Growth and characterization of AlxGa1−xAs Bragg reflectors by LP-MOCVD S. M. VernonS. P. TobinM. M. Al-Jassim OriginalPaper Pages: 335 - 340
Quantitative oxygen measurements in OMVPE Al x Ga1−x As grown by methyl precursors T. F. KuechR. PotemskiG. Scilla OriginalPaper Pages: 341 - 346
GaAs/Ge heterojunction grown by metal-organic chemical vapor deposition and its application to high efficiency photovoltaic devices J. C. ChenM. Ladle RistowJ. G. Werthen OriginalPaper Pages: 347 - 353
Growth mechanism of AlGaAs on terraced substrates by low pressure MOVPE Yoshihiro UetaNaoki WadaYoshihiro Shintani OriginalPaper Pages: 355 - 359
Evaluation of Zn{N[Si(CH3)3]2}2 as ap-type dopant in OMVPE growth of ZnSe W. S. ReesD. M. GreenJ. Kim OriginalPaper Pages: 361 - 366
Experimental investigation of N-MOS inversion layers in the electric quantum limit A. KalnitskyA. R. BoothroydR. Beerkens OriginalPaper Pages: 367 - 372
A study of sputter deposited silicon films Y. P. XuR. S. HuangG. A. Rigby OriginalPaper Pages: 373 - 381
The growth and characterization of GaN on sapphire and silicon Z. J. YuB. S. SyweJ. H. Edgar OriginalPaper Pages: 383 - 387
Relationship between near bandedge absorption and photoluminescence efficiency in semi-insulating GaAs S. TüzemenM. R. BrozelL. Breivik OriginalPaper Pages: 389 - 394