Crack formation in metallized single crystal silicon substrates T. O’brienY. LiS. Danyluk OriginalPaper Pages: 859 - 863
Defects and strains at magnetic and semiconductor interfaces W. W. GerberichL. G. SwansonR. M. KING OriginalPaper Pages: 865 - 872
Investigation of the reversibility of deformation in silicon sheets S. L. HylandC. DubéD. G. Ast OriginalPaper Pages: 873 - 879
The mechanical behavior of silicon during small-scale indentation G. M. PharrW. C. OliverD. R. Clarke OriginalPaper Pages: 881 - 887
On the influence of light on dislocation motion in compound semiconductors T. J. GarosshenC. S. KimJ. M. Galligan OriginalPaper Pages: 889 - 894
Measuring stiffnesses and residual stresses of silicon nitride thin films S. HongT. P. WeihsW. D. Nix OriginalPaper Pages: 903 - 909
Electromigration and mechanical stress in aluminium conductor tracks passivated by anodisation C. A. RossJ. S. DreweryJ. E. Evetts OriginalPaper Pages: 911 - 918
Deformation and bonding processes in aluminum ultrasonic wire wedge bonding James E. KrzanowskiNikhil Murdeshwar OriginalPaper Pages: 919 - 928
The creep and strain rate sensitivity of a high Pb content solder with comparisons to 60Sn/40Pb solder Harvey D. Solomon OriginalPaper Pages: 929 - 936
A real-time photoluminescence imaging system G. LivescuM. AngellW. H. Knox OriginalPaper Pages: 937 - 942
Strain interactions between dislocation arrays in epitaxial Si x Ge1-x /Si heterostructures B. J. BartholomeuszK. Rajan OriginalPaper Pages: 943 - 948
Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates E. A. FitzgeraldY. -H. XieB. E. Weir OriginalPaper Pages: 949 - 955
The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs G. P. WatsonM. O. ThompsonJ. Miller OriginalPaper Pages: 957 - 965
Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition Daniel C. BertoletJung-Kuei HsuKei May Lau OriginalPaper Pages: 967 - 974
Molecular beam epitaxial growth of gaas on gadolinium-gallium garnet A. R. CalawaM. J. Manfra OriginalPaper Pages: 975 - 979
An investigation on hydride VPE growth and properties of semi-insulating InP:Fe Sebastian LourdudossBo HammarlundOlle Kjebon OriginalPaper Pages: 981 - 987
Molecular beam epitaxy and characterization of Al x Ga1-x As y Sb1-y (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates J. A. LottL. R. DawsonS. R. Kurtz OriginalPaper Pages: 989 - 993
Formation of aluminum oxide films from aluminum hexafluoroacetylacetonate at 350–450° c D. TempleA. Reisman OriginalPaper Pages: 995 - 1002
Degenerate cadmium oxide films for electronic devices T. L. ChuShirley S. Chu OriginalPaper Pages: 1003 - 1005