Growth of WSi2 in phosphorous-implanted W/«Si» couples E. MaB. S. LimA. H. Hamdi OriginalPaper Pages: 207 - 211
Application of selective CVD tungsten for low contact resistance via filling to aluminum multilayer interconnection S. RangR. ChowA. G. Williams OriginalPaper Pages: 213 - 216
Growth of device quality GaAs by chemical beam epitaxy T. H. ChiuW. T. TsangC. S. Wu OriginalPaper Pages: 217 - 221
A complete quantitative model of the isothermal vapor phase epitaxy of (Hg,Cd)Te Zoran DjuricZoran DjinovicJozef Piotrowski OriginalPaper Pages: 223 - 228
Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4 M. L. GreenY. S. AliS. Nakahara OriginalPaper Pages: 229 - 237
Influence of V/III variation on AlxGa1-xAs quantum well lasers grown by metalorganic chemical vapor deposition R. G. WatersD. S. Hill OriginalPaper Pages: 239 - 241
Sputtered dielectric films for GaAs diffusion masks R. J. RoedelH. H. ErkayaJ. L. Edwards OriginalPaper Pages: 243 - 247
Ion beam mixing for ohmic contact formation ton-Type GaAs Zhao JieD. A. Thompson OriginalPaper Pages: 249 - 254
On the carrier profiling of GaAsSb/GaAs heterostructures J. H. ZhaoA. Z. LiA. G. Milnes OriginalPaper Pages: 255 - 261