Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions R. M. SardarlyF. T. SalmanovR. M. Abbasli ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 June 2020 Pages: 615 - 622
Charge-Transfer Features in Zinc Sulfide Doped Layers in a Low-Frequency Alternating Electric Field V. T. AvanesyanA. B. ZharkoyA. V. Rakina ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 June 2020 Pages: 623 - 626
AC Electrical Conductivity of FeGaInSe4 N. N. NiftiyevF. M. MammadovM. B. Muradov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 June 2020 Pages: 627 - 629
Optical Properties and Critical Points of PbSe Nanostructured Thin Films M. N. HuseynaliyevS. N. YasinovaS. I. Mekhtiyeva SURFACES, INTERFACES, AND THIN FILMS 03 June 2020 Pages: 630 - 633
Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes V. L. PriyaN. Prithivikumaran SURFACES, INTERFACES, AND THIN FILMS 03 June 2020 Pages: 634 - 640
Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping A. E. GalashevA. S. Vorob’ev SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 03 June 2020 Pages: 641 - 649
MBE-Grown InxGa1 –xAs Nanowires with 50% Composition V. G. DubrovskiiR. R. ReznikG. E. Cirlin SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 03 June 2020 Pages: 650 - 653
Formation of a Two-Phase Structure in CH3NH3PbI3 Organometallic Perovskite D. V. AmasevV. G. MikhalevichA. G. Kazanskii AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 03 June 2020 Pages: 654 - 657
Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures V. A. ShutaevE. A. GrebenshchikovaYu. P. Yakovlev MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 03 June 2020 Pages: 658 - 661
Atomic Carbon Transport between the Rh Surface and Bulk in Graphene Formation and Destruction E. V. Rut’kovE. Yu. Afanas’evaN. R. Gall CARBON SYSTEMS 03 June 2020 Pages: 662 - 665
Correcting the Characteristics of Silicon Photodiodes by Ion Implantation V. E. AsadchikovI. G. DyachkovaE. V. Nikitina PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 666 - 671
Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching L. K. MarkovI. P. SmirnovaA. S. Pavluchenko PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 672 - 676
Ultimate Lasing Temperature of Microdisk Lasers A. E. ZhukovN. V. KryzhanovskayaM. V. Maximov PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 677 - 681
Solar-Blind UV Detectors Based on β-Ga2O3 Films V. M. KalyginaA. V. AlmaevYu. S. Petrova PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 682 - 686
Silicon Light-Emitting Diodes with Luminescence from (113) Defects A. E. KalyadinK. F. Shtel’makhN. A. Sobolev PHYSICS OF SEMICONDUCTOR DEVICES 03 June 2020 Pages: 687 - 690
Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study J. LaifiA. Bchetnia FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 03 June 2020 Pages: 691 - 697