Low-temperature conductivity of silicon doped with antimony A. K. FedotovI. A. SvitoS. L. Prischepa Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 705 - 711
Interstitial carbon formation in irradiated copper-doped silicon N. A. YarykinJ. Weber Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 712 - 715
Effect of copper on the recombination activity of extended defects in silicon O. V. FeklisovaE. B. Yakimov Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 716 - 719
EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon V. I. OrlovO. V. FeklisovaE. B. Yakimov Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 720 - 723
Recombination activity of interfaces in multicrystalline silicon S. M. PeshcherovaE. B. YakimovO. V. Feklisova Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 724 - 728
Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties H. A. NovikovR. I. BatalovP. I. Gaiduk Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 729 - 735
Aluminoborosilicate glasses codoped with rare-earth elements as radiation-protective covers for solar cells E. V. MalchukovaA. S. AbramovE. I. Terukov Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 736 - 740
Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents Ya. L. ShabelnikovaE. B. YakimovM. V. Chukalina Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 741 - 745
Study of the properties of silicon-based semiconductor converters for betavoltaic cells M. A. PolikarpovE. B. Yakimov Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 746 - 748
Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation Zh. V. SmaginaA. V. DvurechenskiiA. K. Gutakovskii Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 749 - 752
Si(hhm) surfaces: Templates for developing nanostructures S. I. BozhkoA. M. IonovA. N. Chaika Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 07 June 2015 Pages: 753 - 759
Specific features of Hall measurements in doped semiconductors V. F. Bannaya Electronic Properties of Semiconductors 07 June 2015 Pages: 760 - 762
On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level V. M. BoikoV. N. BrudniiA. V. Korulin Electronic Properties of Semiconductors 07 June 2015 Pages: 763 - 766
The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb2Te3 and Bi2Se3 V. A. KulbachinskiiA. A. KudryashovV. G. Kytin Electronic Properties of Semiconductors 07 June 2015 Pages: 767 - 773
On the effect of bias on the behavior of MOS structures subjected to ionizing radiation O. V. Aleksandrov Spectroscopy, Interaction with Radiation 07 June 2015 Pages: 774 - 779
Influence of substrate temperature on structural and optical properties of RF sputtered ZnMnO thin films Parisa PashaeiNihan AkinSuleyman Ozcelik Surfaces, Interfaces, and Thin Films 07 June 2015 Pages: 780 - 784
Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation V. A. KukushkinN. V. BaidusA. V. Zdoroveishchev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2015 Pages: 785 - 790
Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides E. D. MishinaN. E. SherstyukL. Kulyuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2015 Pages: 791 - 796
Holes localized in nanostructures in an external magnetic field: g-factor and mixing of states M. A. SeminaR. A. Suris Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2015 Pages: 797 - 806
Wannier-Mott excitons in semiconductors with a superlattice R. A. Suris Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 June 2015 Pages: 807 - 813
Application of the wavelet transform to the problem of the detection and determination of the Lorentzian positions of the 2D band in the Raman spectrum of bilayer graphene T. E. TimofeevaS. A. SmagulovaV. I. Popov Carbon Systems 07 June 2015 Pages: 814 - 818
On the tensosensitivity of a p-n junction under illumination G. GulyamovA. G. Gulyamov Physics of Semiconductor Devices 07 June 2015 Pages: 819 - 822
High-efficiency plasma treatment for surface modification of LPCVD ZnO D. AndronikovA. AbramovV. Afanasjev Physics of Semiconductor Devices 07 June 2015 Pages: 823 - 826
Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs N. I. BochkarevaA. M. IvanovY. G. Shreter Physics of Semiconductor Devices 07 June 2015 Pages: 827 - 835
Effect of different loss mechanisms in SiGeSn based mid-infrared laser Vedatrayee ChakrabortyBratati MukhopadhyayP. K. Basu Physics of Semiconductor Devices 07 June 2015 Pages: 836 - 842