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Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents

  • Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014
  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
  • Published:
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Abstract

A solar cell on a wafer of multicrystalline silicon containing grain boundaries was studied by the induced-current method. The sample was scanned by an electron beam and by a laser beam at two wavelengths (980 and 635 nm). The recorded induced-current maps were aligned by means of a specially developed code, that enabled to analyze the same part of the grain boundary for three types of measurements. Optimization of the residual between simulated induced-current profiles and those obtained experimentally yielded quantitative estimates of the characteristics of a sample and its defects: the diffusion length of minority carriers and recombination velocity at the grain boundary.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    Ya. L. Shabelnikova, E. B. Yakimov & M. V. Chukalina

  2. Kharkevich Institute for Information Transmission Problems, Russian Academy of Sciences, Moscow, 127051, Russia

    D. P. Nikolaev

Authors
  1. Ya. L. Shabelnikova
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  2. E. B. Yakimov
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  3. D. P. Nikolaev
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  4. M. V. Chukalina
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Corresponding author

Correspondence to Ya. L. Shabelnikova.

Additional information

Original Russian Text © Ya.L. Shabelnikova, E.B. Yakimov, D.P. Nikolaev, M.V. Chukalina, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 6, pp. 758–762.

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Shabelnikova, Y.L., Yakimov, E.B., Nikolaev, D.P. et al. Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents. Semiconductors 49, 741–745 (2015). https://doi.org/10.1134/S1063782615060226

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  • DOI: https://doi.org/10.1134/S1063782615060226

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