Abstract
The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb2−x Tl x Te3 (x = 0, 0.005, 0.015, and 0.05) and n-Bi2−x Tl x Se3 (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb2−x Tl x Te3 due to the donor effect of Tl and the electron concentration in n-Bi2−x Tl x Se3 decreases due to the acceptor effect of Tl. The temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb2−x Tl x Te3 and in n-Bi2−x Tl x Se3. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.
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Original Russian Text © V.A. Kulbachinskii, A.A. Kudryashov, V.G. Kytin, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 6, pp. 786–792.
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Kulbachinskii, V.A., Kudryashov, A.A. & Kytin, V.G. The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb2Te3 and Bi2Se3 . Semiconductors 49, 767–773 (2015). https://doi.org/10.1134/S1063782615060135
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DOI: https://doi.org/10.1134/S1063782615060135