Abstract
We have analyzed the mid-infrared SiGeSn based Barrier-Well-Barrier Heterostracture and calculated the transparency carrier density and corresponding current density for the structure. The effects of different loss mechanisms like free carrier absorption, spontaneous recombination and Auger recombination processes on the transparency current density have been examined. It is shown that, the transparency current density increases significantly with the injected carrier density. Different scattering processes like acoustic phonon scattering and intervalley optical phonon scattering are taken into consideration for this analysis of free carrier absorption mechanisms.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. K. Basu, Theory of Optical Processes in Semiconductors: Bulk and Microstructures (Oxford Univ. Press, Oxford, UK, 2003).
G. T. Reed and A. P. Knights, Silicon Photonics: An Introduction (Wiley Interscience, New York, 2004).
M. J. Deen and P. K. Basu, Silicon Photonics: Fundamentals and Devices (Wiley, Chichester, UK, 2012).
N. Izhaky, M. T. Morse, S. Koehl, O. Cohen, D. Rubin, A. Barkai, G. Sarid, R. Cohen, and M. J. Paniccia, IEEE Sel. Top. Quantum Electron. 12, 1688 (2006).
R. A. Soref and L. Friedman, Superlatt. Microstruct. 14, 189 (1993).
R. A. Soref and C. H. Perry, J. Appl. Phys. 69, 539 (1991).
J. Taraci, J. Tolle, J. Kouvetakis, M. R. McCartney, D. J. Smith, J. Menéndez, and M. A. Santana, Appl. Phys. Lett. 78, 3607 (2001).
M. Bauer, C. Ritter, P. A. Crozier, J. Ren, J. Menéndez, G. Wolf, and J. Kouvetakis, Appl. Phys. Lett. 83, 2163 (2003).
J. Menéndez and J. Kouvetakis, Appl. Phys. Lett. 85, 1175 (2004).
P. Moontragoon, Z. Ikonic, and P. Harrison, Semicond. Sci. Technol. 22, 742 (2007).
M. Virgilio and G. Grosso, J. Phys.: Condens. Matter 18, 1021 (2006).
G. He and H. A. Atwater, Phys. Rev. Lett. 79, 1937 (1997).
H. P. L. de Guevara, A. G. Rodriguez, H. Navarro-Contreras, and M. A. Vidal, Appl. Phys. Lett. 84, 4532 (2004).
R. Ragan and H. A. Atwater, Appl. Phys. Lett. 77, 3418 (2000).
P. Moontragoon, R. A. Soref, and Z. Ikonic, J. Appl. Phys. 112, 073106 (2012).
V. R. D’Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis, and J. Menéndez, AIP Conf. Proc. 1199, 39 (2009).
V. R. D’Costa, Y.-Y. Fang, J. Tolle, J. Kouvetakis, and J. Menéndez, Thin Solid Films 518, 2531 (2010).
J. Kouvetakis, J. Tolle, J. Mathews, R. Roucka, and J. Menéndez, ECS Trans. 33, 615 (2010).
S. Bagchi, C. D. Poweleit, R. T. Beeler, J. Kouvetakis, and J. Menéndez, Phys. Rev. B 84, 193201 (2011).
N. Tansu and L. J. Mawst, IEEE J. Quantum Electron. 39, 1205 (2003).
I. Vurgaftman, J. R. Meyer, N. Tansu, and L. J. Mawst, Appl. Phys. Lett. 83, 2742 (2003).
I. Vurgaftman, J. R. Meyer, N. Tansu, and L. J. Mawst, J. Appl. Phys. 96, 4653 (2004).
W. W. Bewley, C. L. Canedy, C. S. Kim, M. Kim, C. D. Merritt, J. Abell, I. Vurgaftman, and J. R. Meyer, Opt. Express 20, 3235 (2012).
G. Chang, S. W. Chang, and S. L. Chuang, Opt. Express 17, 11246 (2009).
W. W. Chow, Appl. Phys. Lett. 100, 191113 (2012).
F. M. Armando and S. Fahy, J. Appl. Phys. 109, 113703 (2011).
G. Sun, R. A. Soref, and H. H. Cheng, J. Appl. Phys. 108, 033107 (2010).
Author information
Authors and Affiliations
Corresponding author
Additional information
The article is published in the original.
Rights and permissions
About this article
Cite this article
Chakraborty, V., Mukhopadhyay, B. & Basu, P.K. Effect of different loss mechanisms in SiGeSn based mid-infrared laser. Semiconductors 49, 836–842 (2015). https://doi.org/10.1134/S1063782615060081
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782615060081