1. Electrical properties of Pb_{1 − x} Mn _x Te single crystals with an excess of tellurium

   • G. Z. Bagieva
   • G. D. Abdinova
   • D. Sh. Abdinov

   Electronic Properties of Semiconductors 08 March 2013 Pages: 315 - 318

2. Photoconductivity of vanadium-doped lead telluride in the terahertz spectral region

   • A. I. Artamkin
   • A. A. Dobrovolsky
   • D. R. Khokhlov

   Electronic Properties of Semiconductors 08 March 2013 Pages: 319 - 322

3. Specific features of self-compensation in Er _x Sn_{1 − x} Se solid solutions

   • J. I. Huseynov
   • M. I. Murguzov
   • Sh. S. Ismayilov

   Electronic Properties of Semiconductors 08 March 2013 Pages: 323 - 326

4. Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection

   • T. T. Mnatsakanov
   • A. G. Tandoev
   • J. W. Palmour

   Electronic Properties of Semiconductors 08 March 2013 Pages: 327 - 334

5. Study of the recombination process at crystallite boundaries in CuIn_{1 − x} Ga _x Se₂ (CIGS) films by microwave photoconductivity

   • K. V. Bocharov
   • G. F. Novikov
   • M. J. Jeng

   Surfaces, Interfaces, And Thin Films 08 March 2013 Pages: 335 - 340

6. Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd₂O₃ as gate dielectric

   • P. Gogoi

   Surfaces, Interfaces, and Thin Films 08 March 2013 Pages: 341 - 344

7. Optical size effect in In₂O₃ nanostructured films

   • V. M. Katerynchuk
   • Z. R. Kudrynskyi

   Surfaces, Interfaces, and Thin Films 08 March 2013 Pages: 345 - 348

8. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

   • R. M. Peleshchak
   • S. K. Guba
   • O. O. Dankiv

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 March 2013 Pages: 349 - 353

9. Dependence of the efficiency of Raman scattering in silicon nanowire arrays on the excitation wavelength

   • K. V. Bunkov
   • L. A. Golovan
   • V. Sivakov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 March 2013 Pages: 354 - 357

10. Influence of irradiation with swift heavy ions on multilayer Si/SiO₂ heterostructures

    • G. A. Kachurin
    • S. G. Cherkova
    • V. A. Skuratov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 March 2013 Pages: 358 - 364

11. Revealing the surface interface correlations in a-Si:H films by 2D detrended fluctuation analysis

    • A. V. Alpatov
    • S. P. Vikhrov
    • N. V. Grishankina

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 March 2013 Pages: 365 - 371

12. Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

    • A. Šilenas
    • Yu. Požela
    • E. A. Klimov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 08 March 2013 Pages: 372 - 375

13. Study of the composition, structure, and optical properties of a-Si_{1 − x} C _x :H〈Er〉 films erbium doped from the Er(pd)₃ complex compound

    • V. Kh. Kudoyarova
    • V. A. Tolmachev
    • E. V. Gushchina

    Amorphous, Vitreous, and Organic Semiconductors 08 March 2013 Pages: 376 - 382

14. Photoconductivity of composite structures based on porous SnO₂ sensitized with CdSe nanocrystals

    • K. A. Drozdov
    • V. I. Kochnev
    • D. R. Khokhlov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 08 March 2013 Pages: 383 - 386

15. Features of the performance of a transient voltage suppressor in the pulsed mode

    • A. Z. Rahmatov
    • O. A. Abdulkhaev
    • D. M. Yodgorova

    Physics of Semiconductor Devices 08 March 2013 Pages: 387 - 391

16. Surface functional composition and sensor properties of ZnO, Fe₂O₃, and ZnFe₂O₄

    • S. S. Karpova
    • V. A. Moshnikov
    • E. S. Kolovangina

    Physics of Semiconductor Devices 08 March 2013 Pages: 392 - 395

17. Theory and simulation of combined mechanisms limiting the safe operating area of power semiconductor microelectronic switches

    • A. V. Gorbatyuk
    • D. V. Gusin
    • B. V. Ivanov

    Physics of Semiconductor Devices 08 March 2013 Pages: 396 - 405

18. Picosecond internal Q-switching mode correlates with laser diode breakdown voltage

    • B. Lanz
    • S. N. Vainshtein
    • J. T. Kostamovaara

    Physics of Semiconductor Devices 08 March 2013 Pages: 406 - 408

19. Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount

    • L. K. Markov
    • I. P. Smirnova
    • A. S. Usikov

    Physics of Semiconductor Devices 08 March 2013 Pages: 409 - 414

20. Optimization of the deposition and annealing conditions of fluorine-doped indium oxide films for silicon solar cells

    • G. G. Untila
    • T. N. Kost
    • M. A. Timofeyev

    Physics of Semiconductor Devices 08 March 2013 Pages: 415 - 421

21. Influence of doping with third group oxides on properties of zinc oxide thin films

    • Sowmya Palimar
    • Kasturi V. Bangera
    • G. K. Shivakumar

    Fabrication, Treatment, and Testing of Materials and Structures 08 March 2013 Pages: 422 - 426

22. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

    • M. V. Shaleev
    • A. V. Novikov
    • Z. F. Krasilnik

    Fabrication, Treatment, and Testing of Materials and Structures 08 March 2013 Pages: 427 - 432

23. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

    • D. V. Shengurov
    • V. Yu. Chalkov
    • Z. F. Krasilnik

    Fabrication, Treatment, and Testing of Materials and Structures 08 March 2013 Pages: 433 - 436

24. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN

    • M. M. Rozhavskaya
    • V. V. Lundin
    • A. F. Tsatsulnikov

    Fabrication, Treatment, and Testing of Materials and Structures 08 March 2013 Pages: 437 - 442

25. Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy

    • V. V. Romanov
    • P. A. Dement’ev
    • K. D. Moiseev

    Fabrication, Treatment, and Testing of Materials and Structures 08 March 2013 Pages: 443 - 448

26. The mechanism of contact-resistance formation on lapped n-Si surfaces

    • A. V. Sachenko
    • A. E. Belyaev
    • V. N. Sheremet

    Fabrication, Treatment, and Testing of Materials and Structures 08 March 2013 Pages: 449 - 454