Abstract
The loss kinetics of photogenerated charge carriers in thin polycrystalline chalcopyrite CuIn1−x Ga x Se2 (CIGS) films has been studied by microwave photoconductivity (at 36 GHz). The films were synthesized using the ampoule method and three variants of physical vapor deposition with subsequent selenization: magnetron sputtering, thermal deposition, and modified thermal deposition with intermetallic precursors. The photoconductivity was excited by 8-ns nitrogen laser pulses with maximum intensity of 4 × 1014 photons/cm per pulse. Measurements were performed in the temperature range 148–293 K. The photoresponse amplitude is found to depend linearly on the sizes of coherent-scattering regions in the film grains, which were calculated from X-ray diffraction data. The photoresponse decay obeys hyperbolic law. The photoresponse half-decay time increases with a decrease in both temperature and light intensity. It is shown that the recombination of free holes with trapped electrons is very efficient near the crystallite boundaries.
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Original Russian Text © K.V. Bocharov, G.F. Novikov, T.Y. Hsieh, M.V. Gapanovich, M.J. Jeng, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 3, pp. 310–315.
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Bocharov, K.V., Novikov, G.F., Hsieh, T.Y. et al. Study of the recombination process at crystallite boundaries in CuIn1 − x Ga x Se2 (CIGS) films by microwave photoconductivity. Semiconductors 47, 335–340 (2013). https://doi.org/10.1134/S1063782613030056
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DOI: https://doi.org/10.1134/S1063782613030056