Abstract
The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 × 10−10 Torr. The oxygen and erbium concentrations in the Si layers grown at 450°C is ∼1 × 1019 and 1018 cm−3, respectively. The silicon epitaxial layers codoped with erbium and oxygen have high crystal quality and yield effective photoluminescence and electroluminescence signals with the dominant optically active Er-1 center forming upon postgrowth annealing at a temperature of 800°C.
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Original Russian Text © D.V. Shengurov, V.Yu. Chalkov, S.A. Denisov, V.G. Shengurov, M.V. Stepikhova, M.N. Drozdov, Z.F. Krasilnik, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 3, pp. 410–413.
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Shengurov, D.V., Chalkov, V.Y., Denisov, S.A. et al. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms. Semiconductors 47, 433–436 (2013). https://doi.org/10.1134/S1063782613030251
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DOI: https://doi.org/10.1134/S1063782613030251