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Influence of doping with third group oxides on properties of zinc oxide thin films

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Abstract

The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 103 Ω−1 cm−1. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.

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Authors and Affiliations

  1. Thin Film Laboratory, Physics Department, National Institute of Technology Karnataka, Surathkal, 575025, Karnataka, India

    Sowmya Palimar, Kasturi V. Bangera & G. K. Shivakumar

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  1. Sowmya Palimar
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  2. Kasturi V. Bangera
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  3. G. K. Shivakumar
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Correspondence to Sowmya Palimar.

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Palimar, S., Bangera, K.V. & Shivakumar, G.K. Influence of doping with third group oxides on properties of zinc oxide thin films. Semiconductors 47, 422–426 (2013). https://doi.org/10.1134/S1063782613030184

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  • DOI: https://doi.org/10.1134/S1063782613030184

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