Specific features of formation and evolution of a longitudinal autosoliton in p-InSb in a longitudinal magnetic field I. K. KamilovA. A. StepurenkoA. E. Gummetov Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 691 - 698
Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals L. A. KosyachenkoO. L. MaslyanchukT. Aoki Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 699 - 704
Spin-peierls transition in the random impurity sublattice of a semiconductor A. I. VeingerA. G. ZabrodskiiS. I. Goloshchapov Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 705 - 711
Doping of IV-VI semiconductors and the energy spectrum of holes with resonance states taken into account L. V. ProkofievaYu. I. RavichA. A. Shabaldin Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 712 - 718
The effects of defects on electrical properties of Ag2S at phase transition F. F. AlievM. B. JafarovV. I. Eminova Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 719 - 722
Innovations in X-ray-induced electron emission spectroscopy (XIEES) K. Ju. PogrebitskyM. D. Sharkov Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 723 - 728
Influence of impurities on the thermoelectric properties of layered anisotropic PbBi4Te7 compound: Experiment and calculations M. K. ZhitinskayaS. A. NemovP. P. Konstantinov Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 729 - 733
Phonon drag of electrons in Ag2S S. A. AlievF. F. AlievR. I. Selim-zade Electrical and Optical Properties of Semiconductors 27 June 2010 Pages: 734 - 736
Nature of forward and reverse saturation currents in metal—semiconductor contacts with the Schottky barrier N. A. Torkhov Semiconductor Structures, Interfaces, and Surfaces 27 June 2010 Pages: 737 - 744
Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts A. E. BelyaevN. S. BoltovetsV. N. Sheremet Semiconductor Structures, Interfaces, and Surfaces 27 June 2010 Pages: 745 - 751
Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors Yu. K. Krutogolov Semiconductor Structures, Interfaces, and Surfaces 27 June 2010 Pages: 752 - 760
Wannier-Stark states in a superlattice of InAs/GaAs quantum dots M. M. SobolevA. P. Vasil’evV. N. Nevedomskii Low-Dimensional Systems 27 June 2010 Pages: 761 - 765
Vibronic properties of organic semiconductors based on phthalocyanine complexes with asymmetrically distributed electron density I. A. BelogorokhovM. N. MartishovD. R. Khokhlov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 27 June 2010 Pages: 766 - 771
Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells V. R. KopachM. V. KirichenkoR. V. Zaitsev Physics of Semiconductor Devices 27 June 2010 Pages: 772 - 777
A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum E. V. KalininaV. G. KossovG. N. Violina Physics of Semiconductor Devices 27 June 2010 Pages: 778 - 788
Pulsed semiconductor lasers with higher optical strength of cavity output mirrors A. N. PetrunovA. A. PodoskinI. S. Tarasov Physics of Semiconductor Devices 27 June 2010 Pages: 789 - 793
Mechanism of the GaN LED efficiency falloff with increasing current N. I. BochkarevaV. V. VoronenkovY. G. Shreter Physics of Semiconductor Devices 27 June 2010 Pages: 794 - 800
Features of the light current-voltage characteristics of bifacial solar cells based on thin CdTe layers A. V. MeriutsG. S. KhrypunovN. V. Deyneko Physics of Semiconductor Devices 27 June 2010 Pages: 801 - 804
Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers D. A. VinokurovM. A. LaduginI. S. Tarasov Physics of Semiconductor Devices 27 June 2010 Pages: 805 - 807
A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices A. F. TsatsulnikovW. V. LundinM. N. Mizerov Physics of Semiconductor Devices 27 June 2010 Pages: 808 - 811
Magnetron-assisted deposition of thin (SiC)1-x(AlN)x alloy films M. K. GusejnovM. K. KurbanovG. K. Safaraliev Fabrication, Treatment, and Testing of Materials and Structures 27 June 2010 Pages: 812 - 815
Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes A. V. SemenovA. V. LopinI. N. Dmitruk Fabrication, Treatment, and Testing of Materials and Structures 27 June 2010 Pages: 816 - 823
Effect of annealing on the structure of Bi2Te3-Bi2Se3 films N. M. AbdullayevS. I. MekhtiyevaA. M. Kerimova Fabrication, Treatment, and Testing of Materials and Structures 27 June 2010 Pages: 824 - 827
Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes N. V. KryzhanovskayaW. V. LundinS. O. Usov Fabrication, Treatment, and Testing of Materials and Structures 27 June 2010 Pages: 828 - 834