Optical absorption and chromium diffusion in ZnSe single crystals Yu. F. VaksmanV. V. PavlovP. V. Shapkin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 377 - 380
Raman spectra of the laser-irradiated GaSe single crystals A. BaidullaevaZ. K. VlasenkoP. E. Mozol’ Electronic and Optical Properties of Semiconductors Pages: 381 - 384
The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects V. N. BrudnyiS. N. GrinyaevN. G. Kolin Electronic and Optical Properties of Semiconductors Pages: 385 - 394
The transport and thermoelectric properties of semiconducting rhenium silicide A. B. FilonovA. E. KrivosheevV. E. Borisenko Electronic and Optical Properties of Semiconductors Pages: 395 - 399
The effect of the charge state of nonequilibrium vacancies on the nature of radiation defects in n-Si crystals T. A. Pagava Electronic and Optical Properties of Semiconductors Pages: 400 - 401
Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 structures I. V. Bodnar’E. S. DmitrievaE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 402 - 405
Edge photoluminescence of single-crystal silicon at room temperature E. G. GuleE. B. KaganovichS. V. Svechnikov Semiconductor Structures, Interfaces, and Surfaces Pages: 406 - 408
Fabrication and photoelectric properties of n-ZnO:Al/PdPc/p-Si structures G. A. Il’chukS. E. NikitinE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 409 - 411
Effects of spatial reproduction as a result of the interference of electron waves in two-dimensional semiconductor nanostructures with parabolic quantum wells V. A. PetrovA. V. Nikitin Low-Dimensional Systems Pages: 412 - 420
Effective mass anisotropy of Γ electrons in a GaAs/(AlGa) as quantum well E. E. VdovinYu. N. Khanin Low-Dimensional Systems Pages: 421 - 428
A quasi-hydrodynamic simulation of electrical conductivity in selectively doped submicrometer-sized layered structures and island films in high electric fields V. A. Gergel’Yu. V. GulyaevM. N. Yakupov Low-Dimensional Systems Pages: 429 - 431
The exciton photoluminescence and vertical transport of photoinduced carriers in CdSe/CdMgSe superlattices I. I. ReshinaS. V. IvanovS. V. Sorokin Low-Dimensional Systems Pages: 432 - 438
Special features of the electrical conductivity in doped α-Si:H films with silicon nanocrystals S. A. ArzhannikovaM. D. EfremovV. A. Volodin Morphous, Vitreous, and Porous Semiconductors Pages: 448 - 454
An electron spin resonance study of copper-carbon systems B. P. Popov Morphous, Vitreous, and Porous Semiconductors Pages: 455 - 457
Influence of pyridine molecule adsorption on concentrations of free carriers and paramagnetic centers in porous silicon layers L. A. OsminkinaA. S. VorontsovP. K. Kashkarov Amorphous, Vitreous, and Porous Semiconductors Pages: 458 - 461
Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers N. A. MaleevA. G. Kuz’menkovV. M. Ustinov Physics of Semiconductor Devices Pages: 462 - 466
A study of carrier statistics in InGaN/Gan LED structures D. S. SizovV. S. SizovN. N. Ledentsov Physics of Semiconductor Devices Pages: 467 - 471
Interfacial and interband lasing in an AnAs/InAsSbP heterostructure grown by vapor-phase epitaxy from metal-organic compounds A. P. AstakhovaN. D. Il’inskayaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 472 - 476
Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers I. I. NovikovN. Yu. GordeevN. N. Ledentsov Physics of Semiconductor Devices Pages: 477 - 480
Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers I. I. NovikovN. Yu. GordeevG. G. Zegrya Physics of Semiconductor Devices Pages: 481 - 484