Abstract
The specific features of the crystal structure of the lamellar GaSe crystals of various polytypes are analyzed. The possibility of identifying the phase transitions, which occur as a result of variations in temperature, pressure, and composition, is considered from the standpoint of resonance Raman scattering. The effects of high-temperature thermal annealing and pulsed laser irradiation on Raman spectra is investigated. It is found that pulsed laser radiation gives rise to regions with different polytype composition and regions with residual stress.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 4, 2005, pp. 405–408.
Original Russian Text Copyright © 2005 by Ba\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)dullaeva, Vlasenko, Dauletmuratov, Kuzan, Mozol’.
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Baidullaeva, A., Vlasenko, Z.K., Dauletmuratov, B.K. et al. Raman spectra of the laser-irradiated GaSe single crystals. Semiconductors 39, 381–384 (2005). https://doi.org/10.1134/1.1900248
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DOI: https://doi.org/10.1134/1.1900248