Abstract
The transport and thermoelectric properties of semiconducting rhenium silicide ReSi1.75 are comprehensively studied both experimentally and theoretically. Single-crystal samples of undoped and aluminumdoped ReSi1.75 are grown by floating-zone melting using optical heating. The temperature dependences of the resistivity, Hall coefficient, and Seebeck coefficient (thermoelectric power) are measured in the range 77–800 K. At room temperature, the charge-carrier concentration for the undoped rhenium silicide is 1019 cm−3 and the carrier mobility is 30 cm2/(V s). The theoretical study of the transport and thermoelectric properties includes ab initio calculation of the band structure; estimation of the carrier effective masses; simulation of the electron and hole mobility, taking into account classical scattering mechanisms; and calculation of the Seebeck coefficient. The results of the simulation and the experimental data are in good agreement.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 4, 2005, pp. 419–423.
Original Russian Text Copyright © 2005 by Filonov, Krivosheev, Ivanenko, Behr, Schumann, Souptel, Borisenko.
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Filonov, A.B., Krivosheev, A.E., Ivanenko, L.I. et al. The transport and thermoelectric properties of semiconducting rhenium silicide. Semiconductors 39, 395–399 (2005). https://doi.org/10.1134/1.1900250
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DOI: https://doi.org/10.1134/1.1900250