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The effect of the charge state of nonequilibrium vacancies on the nature of radiation defects in n-Si crystals

  • Electronic and Optical Properties of Semiconductors
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Abstract

The aim of this study is to gain insight into the effect of the charge state of nonequilibrium vacancies on the processes that occur during irradiation and annealing in silicon crystals. n-Si floating-zone crystals with an electron concentration of N = 6 × 1013 cm−3 are irradiated with 25-MeV protons at 300 K. The irradiated crystals are then studied by the Hall method at temperatures ranging from 77 to 300 K. It is shown that the nature and energy spectrum of radiation defects in n-Si crystals are mainly controlled by the charge state of nonequilibrium vacancies.

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Authors and Affiliations

  1. Georgian Technical University, Tbilisi, 0175, Georgia

    T. A. Pagava

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  1. T. A. Pagava
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 4, 2005, pp. 424–425.

Original Russian Text Copyright © 2005 by Pagava.

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Pagava, T.A. The effect of the charge state of nonequilibrium vacancies on the nature of radiation defects in n-Si crystals. Semiconductors 39, 400–401 (2005). https://doi.org/10.1134/1.1900251

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  • DOI: https://doi.org/10.1134/1.1900251

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