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Interfacial and interband lasing in an AnAs/InAsSbP heterostructure grown by vapor-phase epitaxy from metal-organic compounds

  • Physics of Semiconductor Devices
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Abstract

Sources of coherent radiation are fabricated on the basis of a double InAs/InAsSbP heterostructure, grown by vapor-phase epitaxy from metal-organic compounds, that includes a thick (3.3μm) active region. The spectral characteristics of diodes with various cavity lengths are studied, and light polarization is measured. It is established that the modes that compose the spectrum of radiation are controlled by radiative recombination at the heteroboundary and in the bulk of the active region. A new mode with a wavelength of intermediate value, lying between the wavelengths of the aforementioned kinds of radiation, is observed if the current exceeds the threshold value by 30%. This intermediate mode presumably results from an interaction between the modes related to the interfacial and interband radiative recombination, which are present in the cavity at the same time.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    A. P. Astakhova, N. D. Il’inskaya, A. N. Imenkov, S. S. Kizhaev, S. S. Molchanov & Yu. P. Yakovlev

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  1. A. P. Astakhova
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  2. N. D. Il’inskaya
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  3. A. N. Imenkov
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  4. S. S. Kizhaev
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  5. S. S. Molchanov
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  6. Yu. P. Yakovlev
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 4, 2005, pp. 497–501.

Original Russian Text Copyright © 2005 by Astakhova, Il’inskaya, Imenkov, Kizhaev, Molchanov, Yakovlev.

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Astakhova, A.P., Il’inskaya, N.D., Imenkov, A.N. et al. Interfacial and interband lasing in an AnAs/InAsSbP heterostructure grown by vapor-phase epitaxy from metal-organic compounds. Semiconductors 39, 472–476 (2005). https://doi.org/10.1134/1.1900265

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  • DOI: https://doi.org/10.1134/1.1900265

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