Semiinsulating gallium arsenide for microwave electronics M. G. Mil'vidskiiV. B. OsvenskiiI. N. Shershakova OriginalPaper Pages: 879 - 888
Nonequilibrium deep-center trapping in liquid epitaxy on gallium arsenide Yu. B. BolkhovityanovA. F. KravchenkoS. I. Chikichev OriginalPaper Pages: 889 - 898
Impurity trapping during gas-phase epitaxy on gallium arsenide L. G. Lavrent'eva OriginalPaper Pages: 899 - 909
Deep centers in gallium arsenide associated with intrinsic structural defects B. I. BoltaksM. N. KolotovE. A. Skoryatina OriginalPaper Pages: 919 - 927
Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron V. I. Gaman OriginalPaper Pages: 938 - 951