Literature cited
Yu. G. Sidorov, “Doping gallium arsenide in gas-transport epitaxy,” in: Semiconductor Films for Microelectronics [in Russian], Nauka, Novosibirsk (1977), p. 107.
J. V. DiLorenzo, J. Cryst. Growth,17, 189 (1972).
J. V. DiLorenzo and G. E. Moore, J. Electrochem. Soc.,118, No. 11, 1823 (1971).
P. Rai-Choudhary, J. Cryst. Growth,11, 113 (1971).
L. A. Ivanyutin and N. N. D'yachkova, Fiz. Tekh. Poluprovodn.,5, No. 6, 1158 (1971).
F. V. Williams, J. Electrochem. Soc.,111, No. 7, 886 (1964).
C. M. Wolf and G. E. Stillman, Sol. State Commun.,12, 283 (1973).
L. Hollan, Gallium Arsenide and Related Compounds, Proc. 5th Int. Symp. Inst. Phys. Conf. Ser. No. 24 (1975), p. 22.
J. K. Kennedy, W. D. Potter, and D. E. Davis, J. Cryst. Growth,24/25, 233 (1974).
H. B. Pogge and B. M. Kemlage, J. Cryst. Growth,31, 181 (1975).
M. Heyen, H. Bruch, K. H. Bachem, and P. Balk, J. Cryst. Growth,42, 127 (1977).
L. G. Lavrent'eva and Yu. G. Kataev, in: Gallium Arsenide, Issue 2 [in Russian], Izd. Tomsk. Univ., Tomsk (1969), p. 16.
G. L. Lavrentyeva, G. L. Kataev, et al., Kristall und Technik,6, 5, 607 (1971).
M. D. Vilisova, G. A. Gurchenok, et al., Elekt. Tekh. Ser. Mat., Issue 9, 23 (1979).
G. A. Gurchenok, Izv. Akad. Nauk, Neorg. Mat.,16, No. 12, 2099 (1980).
K. Jakobs, J. Cryst. Growth,56, 363 (1982).
J. B. Mullin, J. Cryst. Growth,42, 77 (1977).
Modern Crystallography, Vol. 3 [in Russian], Nauka, Moscow (1980).
D. Shaw (ed.), Atomic Diffusion in Semiconductors, Plenum Publishing (1973).
S. E. Toropov and M. P. Ruzarkin, Izv. Akad. Nauk SSSR, Neorg. Mat.,17, No. 12, 2122 (1981).
R. Sankharan, J. Electrochem. Soc.,126, No. 5, 797 (1979).
K. Dazai, A. Shibatami, and K. Nakai, Fujitsu Sci. Techn. J.,12, No. 2, 179 (1976).
S. J. Bass, J. Cryst. Growth,44, 29 (1978).
E. Veuhoff, M. Mayer, K.-H. Bachem, and P. Balk, J. Cryst. Growth,53, 598 (1981).
T. Aoki and R. Yamaguchi, Jpn. J. Appl. Phys.,10, 953 (1971).
B. Cairns and R. Fairman, J. Electrochem. Soc.,115, 327 (1968).
L. G. Lavrent'eva, M. D. Vilisova, et al., Izv. Vyssh. Uchebn. Zaved., Fizika, No. 5, 23 (1978).
L. N. Aleksandrov, Yu. G. Sidorov, et al., Izv. Akad. Nauk SSSR, Mikroelektronika,3, No. 6, 493 (1979).
G. A. Aleksandrova, V. A. Malyshev, et al., in: Gallium Arsenide, Issue 2 [in Russian], Izd. Tomsk. Univ., Tomsk (1969), p. 47.
L. G. Lavrent'eva, Yu. G. Kataev, L. G. Nesteryuk, and V. V. Sklyarenko, in: Growth and Structure of Single-Crystal Semiconductor Films [in Russian], Nauka, Novosibirsk (1968), p. 238.
A. V. Rzhanov, V. S. Lisenker, et al., Fiz. Tekh. Poluprovodn.,2, No. 5, 714 (1968).
A. A. Chernov and Ruzaikin, J. Cryst. Growth,45, 73 (1978);52, 185 (1981).
L. G. Lavrent'eva, S. E. Toropov, and L. P. Porokhovinchenko, Izv. Vyssh. Uchebn. Zaved., Fizika, No. 11, 18 (1982).
L. G. Lavrent'eva, L. P. Porokhovinchenko, and O. M. Ivleva, Izv. Vyssh. Uchebn. Zaved., Fizika, No. 11, 54 (1976).
S. E. Toropov, L. P. Porokhovinchenko, and L. G. Lavrent'eva, Izv. Vyssh. Uchebn. Zaved., Fizika, No. 11, 18 (1982).
L. G. Lavrent'eva, L. P. Porokhovinchenko, and P. N. Tymchislin, Izv. Vyssh. Uchebn. Zaved., Fizika, No. 2, 143 (1974).
L. G. Lavrent'eva, L. P. Porokhovinchenko, et al., in: Gallium Arsenide, Issue 5 [in Russian], Izd. Tomsk. Univ., Tomsk (1974), p. 88.
L. G. Lavrent'eva, I. V. Ionin, L. M. Krasil'inkova, and L. P. Porokhovinchenko, in: Growth and Doping of Semiconductor Crystals and Films, Part 2 [in Russian], Nauka, Novosibirsk (1977), p. 84.
L. G. Lavrent'eva, Izv. Vyssh. Uchebn. Zaved., Fizika-, No. 1, 23 (1980).
W. Barton, N. Cabrera, and F. Frank, in: Elementary Crystal-Growth Processes [Russian translation], IL, Moscow (1959), p. 11.
A. A. Chernov, Usp. Fiz. Nauk,73, No. 2, 277 (1961).
A. G. Astafurov, Collection of Students' Papers [in Russian], Izd. Tomsk, Univ., Tomsk (1975), p. 93.
L. G. Lavrent'eva, M. D. Vilisova, et al., Izv. Vyssh. Uchebn. Zaved., Fizika, No. 11, 12 (1982).
T. Nakanisi and M. Kasiwaga, Jpn. J. Appl. Phys.,13, No. 3, 484 (1974).
L. G. Lavrent'eva, M. D. Vilisova, and V. A. Moskovkin, Izv. Vyssh. Uchebn. Zaved., Fizika, No. 6, 42 (1983).
G. A. Aleksandrova, I. V. Ivonin, L. G. Lavrent'eva, et al., Izv. Vyssh. Uchebn. Zaved., Fizika, No. 4, 36 (1982).
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 31–44, October, 1983.
Rights and permissions
About this article
Cite this article
Lavrent'eva, L.G. Impurity trapping during gas-phase epitaxy on gallium arsenide. Soviet Physics Journal 26, 899–909 (1983). https://doi.org/10.1007/BF00896644
Issue Date:
DOI: https://doi.org/10.1007/BF00896644