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Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, USSR

    V. I. Gaman

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  1. V. I. Gaman
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 79–95, October, 1983.

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Gaman, V.I. Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron. Soviet Physics Journal 26, 938–951 (1983). https://doi.org/10.1007/BF00896648

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