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Deep centers in gallium arsenide associated with intrinsic structural defects

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Soviet Physics Journal Aims and scope

Conclusion

  1. 1.

    With some exceptions, deep centers introducible in GaAs by electron irradiation, by thermal treatment, as well as during growth differ in their nature. This means that they probably have different structure. Thus, electron irradiation introduces pure simple defeets, while thermal treatment leads to the formation of complexes of intrinsic defects with doping or residual impurities. The only exceptions are some traps in the first place EL2 which is present in irradiated specimens too, can be introduced during growth, and also by plastic deformation. Such centers are of great interest since they are most likely associated with intrinsic structural defects.

  2. 2.

    In spite of the fact that the results of thermal annealings can not be brought into a single model, the investigation of thermal-treatment defects and their diffusion characteristics is an important practical task, since these defects frequently serve as radiationless recombination centers, impair the thermal stability of high-resistivity material, and, consequently affect the quality of devices.

  3. 3.

    Apparently, one should pay special attention to antistructural defects in GaAs. It is usually customary to interprete the experimental data taking into account solely vacancies and interstitial atoms, on the assumption that antistructural defects are not dominant. Recent experimental data convincingly show that antistructural defects may exist in sufficently large (∼1016 cm−3) concentrations in GaAs, and, owing to the large capture cross section for electrons, their role in electric processes may probe to be very significant.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, USSR

    B. I. Boltaks, M. N. Kolotov & E. A. Skoryatina

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  1. B. I. Boltaks
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  2. M. N. Kolotov
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  3. E. A. Skoryatina
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 56–66, October, 1983.

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Boltaks, B.I., Kolotov, M.N. & Skoryatina, E.A. Deep centers in gallium arsenide associated with intrinsic structural defects. Soviet Physics Journal 26, 919–927 (1983). https://doi.org/10.1007/BF00896646

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